Electronic band structure ofBi2Sr2

Masayuki Satō

¹

,

Ryuichirou Horiba

²

,

Keigo Nagasaka

³

Mn-impurity-conduction-mediated ferromagnetic ordering in Ga1−xMnxAs (x=0.034 and x=0.050)

“…The integrated optical density increases with the temperature above T C . This behavior may be ascribed to the photon-induced phonon-assisted hopping conduction [39], which is proportional to the phonon number. We have obtained a theoretical absorption coefficient of phonon-assisted hopping conduction using the phonon frequency of GaAs.…”

“…This absorption spectrum can be ascribed to photon-induced hopping conduction among localized impurity states, which was investigated in Ge and Si [38]. Using an empirical relation for hopping conduction [39], we obtained the absorption coefficient,…”