Electronic bandstructure of disordered superlattices

Hutchings, D. C.

doi:10.1006/spmi.1999.0775

Cited by 11 publications

References 39 publications

(56 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

Modulation of the second-order susceptibility in GaAs/AlAs superlattices

Hutchings

2000

Applied Physics Letters

View full text Add to dashboard Cite

The modulation of the bulk-like second-order susceptibility with quantum well disordering is calculated for a GaAs/AlAs superlattice. The calculation is based on the A⋅p form of the susceptibility, which is the more appropriate form for semiconductors, and includes the influence of the Γ15c upper conduction band set which ensures the necessary absence of inversion symmetry. The undisordered structure has the degeneracy broken between the χxyz(2) and χzxy(2) tensor elements which is restored upon disordering. The shift of the half-band gap resonance gives a maximum modulation depth Δχxyz(2)≈60 pm V−1 in the transparency window for this structure.

show abstract

Modulation of the second-order susceptibility in GaAs/AlAs superlattices

Hutchings

2000

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Intersubband hole-phonon and alloy disorder scattering in SiGe quantum wells

2001

View full text Add to dashboard Cite

Enhancement of Two-Photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

Pattanaik

Reichert

Khurgin

et al. 2016

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further enhancement of nondegenerate 2PA will be observed in quantum wells (QW's) since the intraband matrix elements do not vanish near the band center as they do in the bulk, and the density of states in QW's is larger near the band edge.Here we present a perturbation-theory based theoretical description of nondegenerate 2PA in semiconductor QW's, where both frequency and polarization of two incident waves can vary independently. Analytical expressions for all possible permutations of frequencies and polarizations have been obtained, and the results are compared with degenerate 2PA in quantum wells along with degenerate and nondegenerate 2PA in bulk semiconductors. We show that using QW's in place of bulk semiconductors with both beams in the TM-polarized mode leads to an additional order of magnitude increase in the nondegenerate 2PA. Explicit calculations for GaAs QW's are presented.

show abstract

Electronic bandstructure of disordered superlattices

Cited by 11 publications

References 39 publications

Modulation of the second-order susceptibility in GaAs/AlAs superlattices

Modulation of the second-order susceptibility in GaAs/AlAs superlattices

Intersubband hole-phonon and alloy disorder scattering in SiGe quantum wells

Enhancement of Two-Photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

Contact Info

Product

Resources

About