Electronic bond rupture of Si-Dimers on Si(001)-(2x1) induced by pulsed laser excitation

Kanasaki, J.; Katoh, Kentaro; Imanishi, Yukihiro; Tanimura, Katsumi

doi:10.1007/s00339-004-2608-z

Cited by 2 publications

(1 citation statement)

References 12 publications

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“…42 THL on surface sites of nonequilibrated valence holes was concluded to be the mechanism responsible for bond breaking when a Si͑111͒-͑2 ϫ 1͒ surface was excited by 1064 nm, 3.5 ns laser pulses. 39 Surface bond rupture rate was studied for Si͑111͒, 3,7,24,39 Si͑100͒, 41,43,44 and other materials. 3 The rate of bond rupture varies between 3 ϫ 10 −5 and 8 ϫ 10 −10 ML/ pulse depending on the laser wavelength and fluence.…”

Section: Nonthermal Effectsmentioning

confidence: 99%

Excitation-induced germanium quantum dot formation on Si(100)-(2×1)

Elsayed-Ali

2010

Journal of Applied Physics

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The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si͑100͒-͑2 ϫ 1͒ was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250°C, a temperature too low for their formation without excitation. At a substrate temperature of 390°C, electronic excitation during growth was found to improve the quantum dot crystalline quality, change their morphology, and decrease their size distribution almost by half. A purely electronic mechanism of enhanced surface hopping of the Ge adatoms is proposed.

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Section: Nonthermal Effectsmentioning

confidence: 99%

Excitation-induced germanium quantum dot formation on Si(100)-(2×1)

Elsayed-Ali

2010

Journal of Applied Physics

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Nonthermal laser-induced formation of crystalline Ge quantum dots on Si(100)

Hegazy

Elsayed-Ali

2008

Journal of Applied Physics

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The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si͑100͒-͑2 ϫ 1͒ grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ϳ120°C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ϳ260°C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions.

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Electronic bond rupture of Si-Dimers on Si(001)-(2x1) induced by pulsed laser excitation

Cited by 2 publications

References 12 publications

Excitation-induced germanium quantum dot formation on Si(100)-(2×1)

Excitation-induced germanium quantum dot formation on Si(100)-(2×1)

Nonthermal laser-induced formation of crystalline Ge quantum dots on Si(100)

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