Electronic cloaking of confined states in phosphorene junctions

Abstract

We study the electronic transport of armchair and zigzag gated phosphorene junctions. We find confined states for both direction-dependent phosphorene junctions. In the case of armchair junctions confined states are reflected in the transmission properties as Fabry-Pérot resonances at normal and oblique incidence. In the case of zigzag junctions confined states are invisible at normal incidence, resulting in a null transmission. At oblique incidence Fabry-Pérot resonances are presented in the transmission as in the case of armchair junctions. This invisibility or electronic cloaking is related to the highly direction-dependent pseudospin texture of the charge carriers in phosphorene. Electronic cloaking is also manifested as a series of singular peaks in the conductance and as inverted peaks in the Seebeck coefficient. The characteristics of electronic cloaking are also susceptible to the modulation of the phosphorene bandgap and an external magnetic field. So, electronic cloaking in phosphorene junctions in principle could be tested through transport, thermoelectric or magnetotransport measurements.

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

“…Before proceeding with this section, it is essential to outline the parameters considered in this study, which are notably more realistic than those in previous works [39,41,46,52] In this section, we are interested in exploring the TMR within an F/N/F junction constructed under modulated phosphorene energy gap. We intend to figure out how an applied electric and magnetic fields influence TMR in such devices.…”

“…Additionally, it can be achieved through oxidation [24,25], passivation [26], or a combination of diverse effects, such as the interaction between electric fields and strain [27][28][29], or between electric fields and doping [20]. In this context, phosphorene as a 2D material with a finite direct band gap, demonstrates high mobility, anisotropic effective mass, and an impressive current on/off ratio [30][31][32][33][34][35][36][37][38][39]. Due to these characteristics, it stands as an ideal candidate for semiconductor technology applications that demand precise gap engineering [33,34,40].…”

Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation

“…The charge carriers in the armchair and zigzag direction are typically regarded as Dirac and Schrödinger electrons, respectively. However, the charge carriers in phosphorene have a special pseudospin texture [24] that can result in exotic phenomena in both directions such as the electronic cloaking of confined states in the zigzag direction [25]. From the experimental standpoint, there are several investigations devoted to produce high quality and stable phosphorene layers [26][27][28], also to develop potential devices based on phosphorene such as biosensors [29,30] optoelectronic devices [31,32], flexible and wearable pressure sensors [33] and energy storage systems [34,35].…”

Design method of reusable reciprocal invisibility and phantom device

“…Furthermore, this invisible phantom technology has also been extended to other physical fields. [12][13][14][15] Invisibility technologies based on metamaterials and transformation optics can be roughly grouped into four categories: double-blind stealth, interactive stealth, phantom stealth, and stealth carpet. The double-blind stealth technology can make the incident electromagnetic waves perfectly bypass the middle stealthy area of the cloak [4,[16][17][18] to achieve an ideal invisibility effect, but since the incident electromagnetic waves cannot penetrate through the enclosed area of the cloak, the detector and the stealthy object are isolated from each other and cannot communicate mutually.…”