Electronic Configuration in Electrodeposition from Aqueous Solutions

Lyons, E. H.

doi:10.1149/1.2781284

Cited by 29 publications

(14 citation statements)

References 14 publications

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“…This will also help the electron transfer process and favor lateral growth condition. The observation that chloride ions facilitate the deposition of metals (9-11) and the suggestion that the formation of chloro or aquo-complexes helps the electron transfer process during nickel deposition (12,13) are also in agreement with our results. …”

supporting

confidence: 91%

On the Jet Etching of N-Type Si

Schmidt¹,

Keiper²

1959

J. Electrochem. Soc.

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diffuse. By the addition of sodium chloride, the deposit crystals became less and less lustrous and finally became dull and even blackish, similar to those obtained from a chloride bath (3). Such surfaces yielded clear diffraction patterns, revealing that the deposits had developed {211} + {1010},,~, orientations. That the loss of details of electron diffraction pattern in the above was not due to noncrystallinity, but due to adsorption of organic compounds, was shown from x-ray pattern of the stripped films, which consisted of rings indicating the crystalline nature of deposits. X-rays, because of their higher penetrating power, are scattered by the underlying metals, whereas electrons are scattered by surface layers which in the present case contained adsorbed additives. The alternate addition of naphthalene trisulfonate and sodium chloride made the deposits bright and dull, with their characteristic surface structures as discussed above.These results suggest that chloride ions facilitate the desorption process of the surface active compounds at the cathode surface and produce more sites for depositions, thus reducing the current density and hence contributing to lateral growth. The depolarization of cathode potential in a gelatine-copper sulfate bath with halide ions has been explained similarly (18). In the competition between chloride ions and surface active agents or other impurities to get adsorbed at the growing cathode surface, it is likely that the former, because of its polarizability (19), prevails over the others. This will also help the electron transfer process and favor lateral growth condition. The observation that chloride ions facilitate the deposition of metals (9-11) and the suggestion that the formation of chloro or aquo-complexes helps the electron transfer process during nickel deposition (12,13) are also in agreement with our results. ABSTRACTThe rate of jet electropolishing of low resistivity n-Si is controlled by two factors: supply of injected minority carriers and rate of dissolution of the SiO~ film. The current through the oxide changes from ionic to electronic, i.e., the silicon becomes passive, if the oxide thickness increases beyond a critical value. The hole supply determines the amount of etching which can occur when the Si is not passivated by a thick oxide layer.

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supporting

confidence: 91%

On the Jet Etching of N-Type Si

Schmidt¹,

Keiper²

1959

J. Electrochem. Soc.

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“…in concentration polarization, plus a component of the polarization arising froin the obstructive iilii~~ence of adsorbed cystine or clrstine-copper complexes. Virtual elimination of this component of the polarization by chloricle might be esplained by facilitated electron transfer through an electron bridge, in the manner suggested by I-Ieyrovsliy (5), or by the forination of inore readily clischargeable chlorocystine-copper con~plexes, in accordance with I.,yons' views (6,7). T h e teilclency for the initial activation overpotei~tial in the cystine-chloride system t o attain, with excess chloride, a lower value than that coi-responding to discharge of the aquo-complex, as discussecl previously, gives some support, pel-haps, to the second suggestion.…”

Section: Discussionmentioning

confidence: 60%

Cystine as an Addition Agent in the Electrodeposition of Copper

Sukava¹,

Winkler²

1955

Can. J. Chem.

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The steady state polarization of 100 mv. in acid copper sulphate electrolyte, at 2 amp./dm.2, appears to consist of 45 to 50 mv. activation overpotential to deposit aquo–copper complexes, 20 to 25 mv. concentration polarization, and about 30 mv. polarization due to hydrogen ion interference. The presence of cystine in the electrolyte gave rise to polarization–time curves similar to those observed previously with gelatine. The increase of polarization caused by cystine appears to be due to an obstructive effect of adsorbed cystine (or its copper complex), together with an increase of concentration polarization. Cystine alone probably does not affect the activation overpotential. Addition of sufficient chloride virtually eliminated the polarization due to obstruction by cystine, possibly by acting as an electron bridge or by forming more readily dischargeable chloro–cystine–copper complexes. Chloride also eliminated the increment in concentration polarization caused by cystine. Attainment of a minimum total steady state polarization of about 40 mv. in the presence of cystine and chloride appeared to reflect an increase of surface, hence a decrease of true current density with time of deposition. The addition agent behavior of methionine was, in most respects, similar to that of cystine. The behavior of thiourea at low concentrations appeared to be complicated, but the effects of chloride were similar to those observed with gelatine.

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“…The present technique can, however, in special cases throw light on the reactions themselves. The results have bearing on Lyons' theory (115) that the rate of reduction of metal cations at electrode interfaces depends on the electronic configuration of solvated or complex ions just prior to reduction. Results by the impedance method indicate that isoelectronic ions do not necessarilv react at the same rate (63).…”

Section: Theorymentioning

confidence: 91%

“…Studies on the use of anhydrous solvents have continued. Data are reported on the behavior of hydrogen chloride in acetone (115) and ether (116), and of tetraalkylammonium salts in acetic acid, acetic anhydride (195), and ethylenediamine (560). Fundamental studies have been made' in ethylenediamine (561) and glacial acetic acid (96).…”

Section: Literature Citedmentioning

confidence: 99%

Polarographic Theory, Instrumentation, and Methodology

Hume¹

1960

Anal. Chem.

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Electronic Configuration in Electrodeposition from Aqueous Solutions

Cited by 29 publications

References 14 publications

On the Jet Etching of N-Type Si

On the Jet Etching of N-Type Si

Cystine as an Addition Agent in the Electrodeposition of Copper

Polarographic Theory, Instrumentation, and Methodology

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