Electronic dispersion relations of monolayer hexagonal boron nitride formed on the Ni(111) surface

Nagashima, A.; Tejima, N.; Gamou, Y.; Kawai, Takazumi; Oshima, C.

doi:10.1103/physrevb.51.4606

Cited by 270 publications

(224 citation statements)

References 34 publications

Supporting

Mentioning

205

Contrasting

Order By: Relevance

“…[16] Nagashima et al investigated the occupied band structure with angle-resolved ultraviolet-photoelectron spectroscopy (ARUPS) and the unoccupied electronic states above the vacuum level with angle-resolved secondaryelectron-emission spectroscopy (ARSEES). [18,19] The results of the band structure below the Fermi energy confirm the calculations but the lowest conduction band was found at an energy of 2.7 eV above E F , in contrast to the theoretical prediction. [16] More recent ARUPS results for the occupied bands are again in agreement with the calculations.…”

Section: Introductionsupporting

confidence: 71%

See 1 more Smart Citation

Exchange-split interface state at h-BN/Ni(111)

et al. 2008

View full text Add to dashboard Cite

Section: Introductionsupporting

confidence: 71%

“…A detailed description of the preparation can be found in the literature. [19] The quality of the preparation was controlled by measuring the work function Φ with target current spectroscopy. Compared with the work function of 5.35 eV for clean Ni(111), the work function is found to be reduced by 1.8±0.1 eV for the h-BN-covered Ni surface.…”

Section: Methodsmentioning

confidence: 99%

Exchange-split interface state at h-BN/Ni(111)

et al. 2008

View full text Add to dashboard Cite

“…The cohesive energy of each BNG structure (solid red squares in the upper panel of the figure) is defined as: The computed value of the band gap of pristine h-BN is here 6.73 eV with experimental values usually found in the relatively wide range 4.6 < E g ≤ 7 eV. 53,54 Electronic energy gaps of (1,W ) BNG structures are reported as a function of p in the lower panel of Figure 2. Different symbols are used for cases where p is a multiple of 3 (empty blue circles) and where it is not (full red circles).…”

Section: Resultsmentioning

confidence: 99%

Inducing a Finite In-Plane Piezoelectricity in Graphene with Low Concentration of Inversion Symmetry-Breaking Defects

et al. 2015

View full text Add to dashboard Cite

We show that a finite in-plane piezoelectricity can be induced in graphene by breaking its inversion center with any in-plane defect, in the limit of vanishing defect concentration. We first consider different patterns of BN-doped graphene sheets of D 3h symmetry, whose electronic and piezoelectric (dominated by the electronic rather than nuclear term) properties are characterized at the ab initio level of theory. We then consider other in-plane defects, such as holes of D 3h or C 2v point-symmetry, and confirm that a common limit value (for low defect concentration) of the piezoelectric response of graphene is obtained regardless of the particular chemical or physical nature of the defects (e 11 ≈ 4.5 × 10 −10 C/m and d 11 ≈ 1.5 pm/V for direct and * To whom correspondence should be addressed † Equipe de Chimie Physique, IPREM UMR5254, Université de Pau et des Pays de l'Adour, 64000 Pau, France ‡ Chemistry Department, Faculty of Science, Minia University, Minia 61519, Egypt ¶ Dipartimento di Chimica and Centre of Excellence NIS (Nanostructured Interfaces and Surfaces), Università di Torino, via Giuria 5, IT-10125 Torino (Italy) 1 converse piezoelectricity, respectively). This in-plane piezoelectric response of graphene is one-order of magnitude larger than the out-of-plane previously investigated one.

show abstract

“…20 A method more consistent with the requirement of rotational alignment would be direct epitaxy of the graphene electrodes and the insulator. Recent works with BN (an insulator with band gap of 6.0 eV), 21 which can be grown epitaxially, 22 provide key steps in this direction but much work on the epitaxy of 2D materials remains to be done.…”

Section: Discussionmentioning

confidence: 99%

Single-particle tunneling in doped graphene-insulator-graphene junctions

Feenstra

Jena

Gu³

2012

Journal of Applied Physics

157

260

View full text Add to dashboard Cite

The characteristics of tunnel junctions formed between n-and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the twodimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak are computed, and its use for devices is discussed. The influences of both rotational alignment of the graphene electrodes and structural perfection of the graphene are also discussed.

show abstract

Electronic dispersion relations of monolayer hexagonal boron nitride formed on the Ni(111) surface

Cited by 270 publications

References 34 publications

Exchange-split interface state at h-BN/Ni(111)

Exchange-split interface state at h-BN/Ni(111)

Inducing a Finite In-Plane Piezoelectricity in Graphene with Low Concentration of Inversion Symmetry-Breaking Defects

Single-particle tunneling in doped graphene-insulator-graphene junctions

Contact Info

Product

Resources

About