Electronic doping and scattering by transition metals on graphene

Pi, K.; McCreary, Kathleen M.; Bao, Wenzhong; Han, Wei; Chiang, Y. F.; Li, Yan; Tsai, Shan-Wen; Lau, Chun Ning; Kawakami, Roland

doi:10.1103/physrevb.80.075406

Cited by 257 publications

(241 citation statements)

References 26 publications

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“…This nearly 3.3 times reduction in contact resistance may possibly be attributed to the gate-induced electron injection from graphene layer to MoS 2 . At the hetero-contact structure, the positive back-gate bias not only electro-statically dopes MoS 2 , but also could move the Fermi-level in Ti doped n-type graphene [18][19][20][21] further up beyond the Ti/MoS 2 pinning level, thus enhance the electron injection from metal into the conduction band of MoS 2 leading to a lower contact resistance. The key difference from previous devices is that the back-gate can modulate not only the Fermi-level of the channel but also the contact (graphene) as shown in the inset of Figure 3(b) [19].…”

Section: Resultsmentioning

confidence: 99%

<inline-formula> <tex-math notation="TeX">${\rm MoS}_{2}$ </tex-math></inline-formula> Field-Effect Transistors With Graphene/Metal Heterocontacts

Zhang

et al. 2014

IEEE Electron Device Lett.

145

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 Abstract-For the first time, n-type few-layer MoS 2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 μm gate length with an on-off current ratio of 10 7 . The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS 2 FETs without graphene contact layer. Temperature dependent study on MoS 2 /graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS 2 /graphene /metal hetero-contacts structure.

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Section: Resultsmentioning

confidence: 99%

<inline-formula> <tex-math notation="TeX">${\rm MoS}_{2}$ </tex-math></inline-formula> Field-Effect Transistors With Graphene/Metal Heterocontacts

Zhang

et al. 2014

IEEE Electron Device Lett.

145

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“…368,369 Finally, as the electron beams can now be focused onto the areas with diameters of less than 1 Å, displacement of individual carbon atoms 333 followed by "plugging" of the vacancies with noncarbon atoms may give rise to novel nanostructures with very interesting electronic and magnetic properties. 370 Indeed, recent simulations 371,372 indicate that bonding of transition metal atoms to defects in graphenic structures is strong, while metal adatoms on graphene surface are mobile at room and elevated temperature, so that it should be possible to produce such structures by depositing metal atoms on the irradiated surface of graphene or nanotubes and by raising then the temperature in such a way that the adatoms become mobile, and the defects will pin the adatoms.…”

Section: Engineering Carbon Nanostructures With a Focused Electron Beammentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

944

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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“…Recently, graphene has gathered tremendous attention due to its unique electronic and mechanical properties for nanoscale electronics 5 . As a candidate material for spintronic devices, transition-metal-atom-decorated graphene (denoted as TM-graphene hereafter) has been studied extensively in theory 6-9 and experiment [10][11][12][13][14][15] , manifesting some remarkable electronic and magnetic behaviors. Thus, developing a novel method to tune the magnetism of TM-graphene system is quite urgent for future spintronics applications.…”

Section: Introductionmentioning

confidence: 99%

Strain control of magnetism in graphene decorated by transition-metal atoms

Huang

Wei

2011

Phys. Rev. B

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We report a strain-controlled tuning of magnetism in transition-metal-atom-decorated graphene. Our first-principles calculations demonstrate that strain can lead to a sudden change in the magnetic configuration of a transition metal (TM) adatom and the local atomic structure in the surrounding graphene layer. A strong spin-dependent hybridization between TM d and graphene π orbital states, derived from the orbital selection rule of the local lattice symmetry, is responsible for the determination of the local electronic and magnetic structure. Our results indicate that the strain can be an effective way to control the magnetism of atomic-scale nanostructures, where the reliable control of their magnetic states is a key step for the future spintronic applications.

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Electronic doping and scattering by transition metals on graphene

Cited by 257 publications

References 26 publications

<inline-formula> <tex-math notation="TeX">${\rm MoS}_{2}$ </tex-math></inline-formula> Field-Effect Transistors With Graphene/Metal Heterocontacts

<inline-formula> <tex-math notation="TeX">${\rm MoS}_{2}$ </tex-math></inline-formula> Field-Effect Transistors With Graphene/Metal Heterocontacts

Ion and electron irradiation-induced effects in nanostructured materials

Strain control of magnetism in graphene decorated by transition-metal atoms

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