2003
DOI: 10.1103/physrevb.68.085407
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Electronic evidence of asymmetry in theSi(111)3×3<

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Cited by 63 publications
(52 citation statements)
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“…2 is in sharp contrast to the recent photoemission study of the same surface, in which a splitting between S 2 and S 3 with a gap as large as 0.22± 0.07 eV was reported at a reduced sample temperature ͑120 K͒. 5 Since the sample preparation method and measurement geometries in Ref. 5 were very similar to what we have used, it is important to find the reason for the discrepancy.…”
contrasting
confidence: 49%
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“…2 is in sharp contrast to the recent photoemission study of the same surface, in which a splitting between S 2 and S 3 with a gap as large as 0.22± 0.07 eV was reported at a reduced sample temperature ͑120 K͒. 5 Since the sample preparation method and measurement geometries in Ref. 5 were very similar to what we have used, it is important to find the reason for the discrepancy.…”
contrasting
confidence: 49%
“…The transition temperature is believed to be somewhat below 150 K based on photoemission and x-ray diffraction measurements. 5,10 The hexagonal appearance of the empty-state STM images and the IET model was supported by a theoretical calculation, 3 which found that the IET model is more favorable, energetically, than the HCT model. As a consequence of the two different Ag trimers in the IET structure, the plane containing the surface normal and the ͓112͔ direction is no longer a mirror plane.…”
mentioning
confidence: 75%
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