Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices

Mauk, Michael G.; McNeely, J. B.

doi:10.21236/ada232088

1991

DOI: 10.21236/ada232088

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Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices

Michael G. Mauk¹,

J. B. McNeely²

Abstract: 216SQff ISMTGNAUTHR 3. OISTRUILTINI AVAILAIIUTY OF Re"OR b6 0CLASWICTM 00WISPAD" CHEULEApproved for public release; distribution unlimited. 4. PIO40WNG ONGANIZTMO E11010 4EW =S. MONITORMN OAG0ANIZTIN RIPOT NUMIER(

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2011

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“…95% yield . The overall deposition process and apparatus are similar to the vapor-transport process used commercially for the high-throughput/low-cost growth of CdTe thin-film photovoltaics. , CSVT is therefore a potentially scalable cost-effective route to GaAs thin films. − …”

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confidence: 99%

Efficient n-GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source

Ritenour

Cramer

Levinrad

et al. 2011

ACS Appl. Mater. Interfaces

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n-GaAs films were grown epitaxially on n(+)-GaAs substrates by a close-spaced vapor transport method and their photoelectrochemical energy conversion properties studied. Under 100 mW cm(-2) of ELH solar simulation, conversion efficiencies up to 9.3% for CSVT n-GaAs photoanodes were measured in an unoptimized ferrocene/ferrocenium test cell. This value was significantly higher than the 5.7% measured for similarly doped commercial n-GaAs wafers. Spectral response experiments showed that the higher performance of CSVT n-GaAs films relative to the commercial wafers was due to longer minority carrier diffusion lengths (L(D)), up to 1,020 nm in the CSVT films compared to 260 nm in the commercial n-GaAs wafers. Routes to improve the performance of CSVT GaAs and the implications of these results for the development of scalable GaAs-based solar energy conversion devices are discussed.

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mentioning

confidence: 99%

Efficient n-GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source

Ritenour

Cramer

Levinrad

et al. 2011

ACS Appl. Mater. Interfaces

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Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices

Abstract: 216SQff ISMTGNAUTHR 3. OISTRUILTINI AVAILAIIUTY OF Re"OR b6 0CLASWICTM 00WISPAD" CHEULEApproved for public release; distribution unlimited. 4. PIO40WNG ONGANIZTMO E11010 4EW =S. MONITORMN OAG0ANIZTIN RIPOT NUMIER(

Cited by 1 publication

References 26 publications

Efficient n-GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source

Efficient n-GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source

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