2010
DOI: 10.1021/nl103128a
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Electronic Junction Control in a Nanotube-Semiconductor Schottky Junction Solar Cell

Abstract: We exploit the low density of electronic states in single wall carbon nanotubes to demonstrate active, electronic modulation of their Fermi level offset relative to n-type silicon in a nanotube-Si (metal-semiconductor) Schottky junction solar cell. Electronic modulation of the Fermi level offset, the junction interface dipole and a field developed across the depletion layer modifies the built-in potential in the device and its power generation characteristics. As produced (before modulation) devices exhibit ∼8… Show more

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Cited by 136 publications
(147 citation statements)
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“…nanometer thin SiOx insulator between the Si and metal, minority charge carriers will be transported through the insulating layer by CNT fibers [119]. By applying a series of doping and gating methods such as SOCl 2 treatment [116], ionic liquid electrolyte infiltration and electronic gating [120,121] as well as nitric acid doping [122], the power conversion efficiencies of the CNT-Si cells have been continuously pushed from initially about 1.3% to 13.8% (within the last several years.…”
Section: Semiconducting Cnts As a Part Of Active Layermentioning
confidence: 99%
“…nanometer thin SiOx insulator between the Si and metal, minority charge carriers will be transported through the insulating layer by CNT fibers [119]. By applying a series of doping and gating methods such as SOCl 2 treatment [116], ionic liquid electrolyte infiltration and electronic gating [120,121] as well as nitric acid doping [122], the power conversion efficiencies of the CNT-Si cells have been continuously pushed from initially about 1.3% to 13.8% (within the last several years.…”
Section: Semiconducting Cnts As a Part Of Active Layermentioning
confidence: 99%
“…Similar devices were also reported using the CNT deposition method of Wu [4] which involves vacuum filtration of CNT onto mixed cellulose ester (MCE) membranes which can then be removed by dissolution with acetone [13]. Application of a gate potential to alter electronic junction properties (via ionic liquid electrolyte) was reported to adjust efficiency between 4 and 11 % reversibly and dynamically, and this was interpreted to be due to the modulation of carbon nanotube Fermi level and improvement of the homogeneity of the silicon depletion region [14]. Even higher PCE solar cells (13.8 %) have been reported in which nanotubes were doped in situ by nitric acid (HNO 3 ), where a decrease of tube-tube resistance and shifting of Fermi level down into the valence band contributed to high efficiency [9].…”
Section: Introductionmentioning
confidence: 99%
“…Since then, this simple but efficient structure ignited great research interest worldwide. Wadhwa et al [3] used SWNTs "buckypaper" with SOCl2 ionic liquid and obtained the efficiency of 8%. SWNTs showed good performance but the fabrication process of SWNTs film included surfactant, sonication, vacuum filtration and liquid state doping chemicals which made the device life-time extremely short.…”
Section: Introductionmentioning
confidence: 99%