Electronic modification of wet-prepared Si surfaces by a dichlorosilane reaction at elevated temperature

We grow 28Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, 28Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K, we measure a high mean mobility of [Formula: see text] cm2/V s and a low mean percolation density of [Formula: see text] cm−2. From the analysis of Shubnikov–de Haas oscillations at T = 190 mK, we obtain a long mean single particle relaxation time of [Formula: see text] ps, corresponding to a mean quantum mobility and quantum level broadening of [Formula: see text] cm2/V s and [Formula: see text] [Formula: see text], respectively, and a small mean Dingle ratio of [Formula: see text], indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits.

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Metallic nanofilms on Si(100) and SiO₂ grown with a ruthenium precursor

Bolotov,

Kotsugi,

Tsugawa

et al. 2024

Jpn. J. Appl. Phys.

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Ruthenium (Ru) nanofilms (<3 nm) were prepared using tricarbonyl(trimethylenemethane)ruthenium, Ru(TMM)(CO)3 at 230 oC. We show that the surface morphology and electrical conductance of Ru nanofilms are substantially different on H:Si(100) and SiO2/Si(100) substrates. Two-dimensional (2D) Ru nanofilms (~1 nm) were formed on H:Si(100), while thick (~3 nm) granular Ru films were formed on SiO2 substrate under the same growth conditions, as confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. Using scanning probe microscopy, the metallic conductance of Ru grains on H:Si(100) substrates was recognized. On ultrathin (1 nm) SiO2/Si(100) substrates, the spatial separation of Ru grains facilitates the single electron tunneling (SET) phenomenon in the double-barrier tunneling junction structure. The results emphasized the difference in carrier transport in Ru nanofilms on Si and SiO2 substrates.

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Electronic modification of wet-prepared Si surfaces by a dichlorosilane reaction at elevated temperature

Cited by 3 publications

References 61 publications

Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods

Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods

Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap

Metallic nanofilms on Si(100) and SiO₂ grown with a ruthenium precursor

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Electronic modification of wet-prepared Si surfaces by a dichlorosilane reaction at elevated temperature

Cited by 3 publications

References 61 publications

Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods

Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods

Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap

Metallic nanofilms on Si(100) and SiO2 grown with a ruthenium precursor

Contact Info

Product

Resources

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Metallic nanofilms on Si(100) and SiO₂ grown with a ruthenium precursor