Electronic multi-harmonic load-pull system for experimentally driven power amplifier design optimization

Hashmi, Mohammad S.; Clarke, A. L.; Woodington, S.; Lees, Jonathan; Benedikt, J.; Tasker, P.J.

doi:10.1109/mwsym.2009.5166005

Cited by 22 publications

(13 citation statements)

References 5 publications

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“…All of the measurements were performed on our time domain RF IV waveform measurement system [10] equipped with the Envelope Load Pull (ELP) system [11], using a fundamental frequency of 900MHz. The measurements were then de-embedded in order to remove the reactive current caused by the drain-source capacitance.…”

Section: Measurement Proceduresmentioning

confidence: 99%

Development of an RF IV waveform based stress test procedure for use on GaN HFETs

McGenn

Uren

Benedikt

et al. 2012

Microelectronics Reliability

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This paper reports on the development of an RF IV waveform based stress test procedure. DC and low-voltage RF characterisation was carried out before and after high power RF stress. RF waveform measurements showed that the exact change in the RF load line induced during RF degradation cannot be directly inferred from the DC or low power RF measurement. The RF degradation takes the form of a knee-walkout, a small pinch-off shift consistent with charge trapping and defect generation, and in addition gate leakage occurs once the RF voltage exceeds a critical voltage.

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Section: Measurement Proceduresmentioning

confidence: 99%

Development of an RF IV waveform based stress test procedure for use on GaN HFETs

McGenn

Uren

Benedikt

et al. 2012

Microelectronics Reliability

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“…The active multi-harmonic load-pull system presented in [7] is used for measurements. No source-pull is implemented at the fundamental or harmonic frequencies and a fixed impedance of approximately 50 n is used.…”

Section: Measurement Proceduresmentioning

confidence: 99%

Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements

Clarke

Cripps

Benedikt

et al. 2010

2010 IEEE MTT-S International Microwave Symposium

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In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0.9 GHz and investigated for load-and supply-modulation applications.The results show that both techniques perform equally well for back-off levels ::;6.5 dB. At higher back-off levels, the efficiency improvements achieved by supply modulation outperform load modulation. At 10 dB back-off, supply, and load modulation provide a power-added efficiency (PAE) of 68%, and 58%, respectively. Using measured intrinsic waveforms, it is shown that PAE degradations in load modulation can be mainly attributed to parallel losses rather than series losses, which are dominant in supply modulation. The harmonic contents of the intrinsic waveforms, in both techniques, are equally strong in back-off and peak power operations. There is, therefore, a great potential for further efficiency enhancement by circuit-level optimization of harmonic terminations for back-off.Index Terms-Efficiency, GaN HEMT, load modulation, power amplifier, supply modulation.• Load modulation: ZL is varied while ZL,2fo, ZL,3fo, and VD are fixed. A power sweep is performed for each ZL. IMS 2010• Supply modulation: ZL is kept fixed but VD is varied. A power sweep is performed at each VD.

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“…Load pull [1][2][3][4][5][6] is a technique for synthesizing various impedance conditions for the nonlinear characterization of microwave devices. The load synthesis using the load-pull approach also allows quick data generation for modeling of the device, within the computer-aided design (CAD) environment, for any particular application.…”

Section: Introductionmentioning

confidence: 99%

“…Load-pull systems are classed into two main categories, namely passive load pull [1,2] and active load pull [3][4][5][6], where the desired load is synthesized by varying the reflection coefficient of the impedance controlling element. In passive load-pull systems, the load reflection coefficient is varied by modifying the phase and amplitude of the reflected wave through passive tuners.…”

Section: Introductionmentioning

confidence: 99%

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Agile harmonic envelope load-pull system enabling reliable and rapid device characterization

Hashmi

Clarke

Lees

et al. 2010

Meas. Sci. Technol.

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This paper presents a robust heterodyne mode of operation for the envelope load-pull system. Extensive performance evaluation and verification demonstrate the reliable, flexible and accurate nature of the system. The new system was compared with the active open-loop load pull, with the new system standing out as having superior performance in terms of measurement throughput, thereby improving the yield and turn-around in the design of power amplifiers. Finally, measurements on commercially available microwave transistor devices show some of the immediate recognized application areas of the developed system.

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Electronic multi-harmonic load-pull system for experimentally driven power amplifier design optimization

Cited by 22 publications

References 5 publications

Development of an RF IV waveform based stress test procedure for use on GaN HFETs

Development of an RF IV waveform based stress test procedure for use on GaN HFETs

Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements

Agile harmonic envelope load-pull system enabling reliable and rapid device characterization

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