Electronic noise—From advanced materials to quantum technologies

Balandin, Alexander A.; Paladino, Elisabetta; Hakonen, Pertti J.

doi:10.1063/5.0197142

Applied Physics Letters

2024

DOI: 10.1063/5.0197142

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Electronic noise—From advanced materials to quantum technologies

Alexander A. Balandin,

Elisabetta Paladino,

Pertti J. Hakonen

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2024

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Cited by 5 publications

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Effects of Charge Imbalance on Field‐Induced Instability of HfO₂‐Based Ferroelectric Tunnel Junctions

Shin,

Han,

Kim

et al. 2024

Adv Elect Materials

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Ferroelectricity in hafnium‐based materials has attracted significant research attention and is used in various applications owing to their complementary metal‐oxide‐semiconductor compatibility, scalability, and low‐power operation. However, their widespread integration into various technologies is hindered by reliability and stability problems, particularly field‐induced instability, which causes fluctuations in polarization characteristics during operation. Herein, on the underlying mechanism of field‐induced instability is reported in pure hafnium oxide films within metal‐ferroelectric‐insulator‐semiconductor (MFIS) ferroelectric tunnel junctions (FTJs). The comprehensive material analysis combined with low‐frequency noise (LFN) measurements reveals that the presence of oxygen vacancies and interface traps within the ferroelectric and dielectric layers induces a charge imbalance in the FTJ, leading to distortion in its polarization characteristics and the onset of cyclic evolution in field‐induced instability. Furthermore, high‐pressure annealing effectively mitigates field‐induced instability by reducing the defects within the film, thereby alleviating the associated charge imbalance. These findings contribute to a deeper understanding of the internal dynamics of FTJs and provide an efficient approach to enhancing their stability.

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Effects of Charge Imbalance on Field‐Induced Instability of HfO₂‐Based Ferroelectric Tunnel Junctions

Shin,

Han,

Kim

et al. 2024

Adv Elect Materials

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Topological and chiral matter—Physics and applications

Vergniory,

Kondo,

Kotov

et al. 2024

Applied Physics Letters

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1 / f noise in semiconductors arising from the heterogeneous detrapping process of individual charge carriers

Kononovicius,

Kaulakys

2024

J. Stat. Mech.

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We propose a model of 1 / f noise in semiconductors based on the drift of individual charge carriers and their interaction with the trapping centers. We assume that the trapping centers are homogeneously distributed in the material. The trapping centers are assumed to be heterogeneous and have unique detrapping rates. We show that uniform detrapping rate distribution emerges as a natural consequence of the vacant trap depths following the Boltzmann distribution, and the detrapping process obeying Arrhenius law. When these laws apply, and if the trapping rate is low in comparison to the maximum detrapping rate, 1 / f noise in the form of Hooge’s relation is recovered. Hooge’s parameter, α H, is shown to be a ratio between the characteristic trapping rate and the maximum detrapping rate. The proposed model implies that 1 / f noise arises from the temporal charge carrier number fluctuations, not from the spatial mobility fluctuations.

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Electronic noise—From advanced materials to quantum technologies

Cited by 5 publications

References 75 publications

Effects of Charge Imbalance on Field‐Induced Instability of HfO₂‐Based Ferroelectric Tunnel Junctions

Effects of Charge Imbalance on Field‐Induced Instability of HfO₂‐Based Ferroelectric Tunnel Junctions

Topological and chiral matter—Physics and applications

1 / f noise in semiconductors arising from the heterogeneous detrapping process of individual charge carriers

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Electronic noise—From advanced materials to quantum technologies

Cited by 5 publications

References 75 publications

Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions

Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions

Topological and chiral matter—Physics and applications

1 / f noise in semiconductors arising from the heterogeneous detrapping process of individual charge carriers

Contact Info

Product

Resources

About

Effects of Charge Imbalance on Field‐Induced Instability of HfO₂‐Based Ferroelectric Tunnel Junctions

Effects of Charge Imbalance on Field‐Induced Instability of HfO₂‐Based Ferroelectric Tunnel Junctions