“…Subsequent studies demonstrated that superconductivity is induced in general by electron doping in the blocking layers, as with the systems LnO 1−x F x BiS 2 (Ln = La, Ce, Pr, Nd, Yb) and La 1−x M x OBiS 2 (M = Ti, Zr, Hf, Th) [13] layer [14,15]. The parent compounds, AOBiS 2 (A = La, Ce, Th) [6,13] and SrFBiS 2 [14][15][16], are bad metals and show semiconducting-like behavior; however, theoretical studies employing the tight-binding model and density functional calculations predicted that electron doping in the BiS 2 system increases the density of states at the Fermi level [17,18], making electron doping a crucial tuning parameter for superconductivity. The pairing mechanism in both Bi 4 O 4 S 3 and LaO 0.5 F 0.5 BiS 2 has also been investigated; recent studies of the temperature dependence of the penetration depth by the tunnel diode oscillator technique revealed evidence for fully gapped, strongly-coupled s-wave superconductivity in the Bi 4 O 4 S 3 compound [19], and an s-wave character for LaO 0.5 F 0.5 BiS 2 was indicated in muon-spin spectroscopy measurements [20].…”