Electronic properties and bonding sites for chlorine chemisorption on Si(111)-(7×7)

Schnell, R.D.; Rieger, D.; Bogen, A.; Himpsel, F. J.; Wandelt, K.; Steinmann, W.

doi:10.1103/physrevb.32.8057

Cited by 121 publications

(34 citation statements)

References 50 publications

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“…The magnitude and direction of this shift are consistent with expectations for a Si-Cl species because Cl ͑of electronegativity p = 3.16͒ 41 is more electronegative than Si ͑ p = 1.90͒, 41 and electron density should thus be withdrawn from surface Si atoms to which Cl is bonded. Chlorine-terminated Si͑111͒ surfaces prepared using UHV techniques have been reported previously to display Si 2p binding energy XPS peak shifts of 0.7-0.9 eV, 3,17,[42][43][44][45] consistent with the observations described herein. The signal at +0.83 eV binding energy from the bulk Si 2p 3/2 peak represented an equivalent coverage of 0.98 ML.…”

Section: Resultssupporting

confidence: 80%

“…Mono-, di-, and trichloride species are produced at low temperatures ͑Ͻ400°C͒, while the monochloride moiety is the only species that remains stable at higher temperatures. 3 The Cl atoms occupy sites on the Si͑111͒-7 ϫ 7 surface with the Si-Cl bond oriented normal to the surface. 11 Such surfaces have also been studied extensively theoretically.…”

Section: Introductionmentioning

confidence: 99%

“…[3][4][5][6][7][8][9] X-ray photoelectron spectroscopy ͑XPS͒, Auger emission spectroscopy and low energy electron diffraction have indicated that such functionalization methods produce fully chlorinated silicon surfaces. 3,10 Chlorine absorbs with an initial sticking coefficient of ϳ0.1 on the thermodynamically stable clean Si͑111͒-7 ϫ 7 surface, with the absorbed Cl existing in both weakly and strongly bound states. Mono-, di-, and trichloride species are produced at low temperatures ͑Ͻ400°C͒, while the monochloride moiety is the only species that remains stable at higher temperatures.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Chlorination of hydrogen-terminated silicon (111) surfaces

Rivillon

Chabal

Webb

et al. 2005

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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Infrared absorption spectroscopy was used to investigate the chlorination of hydrogen-terminated Si͑111͒ surfaces by three different methods: ͑a͒ exposure to a saturated solution of phosphorus pentachloride ͑PCl 5 ͒ in chlorobenzene; ͑b͒ exposure to chlorine gas, Cl 2 ͑g͒, and ͑c͒ exposure to Cl 2 ͑g͒ under UV illumination. X-ray photoelectron spectroscopy and first principles model ͑clusters͒ calculations were used to explore the structure and dynamics of these surfaces. The infrared spectra exhibited sharp chlorine-related vibrations at 586 and 527 cm −1 . The narrow full width at half maximum of these vibrations for all three preparation methods indicated that all functionalization schemes produced a nearly complete monolayer of Cl with little surface roughening or introduction of step edges. The 527 cm −1 mode was at a much higher frequency than might be expected for the bending vibration of Si monochloride. Theoretical calculations show, however, that this vibration involves the displacement of the top Si atom parallel to the surface, subject to a relatively stiff potential, shifting its frequency to a value fairly close to that of the Si-Cl stretching mode on a Si͑111͒ surface.

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Section: Resultssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Chlorination of hydrogen-terminated silicon (111) surfaces

Rivillon

Chabal

Webb

et al. 2005

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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“…Prior research has shown that with each Cl addition to Si there is a ∼0.9-1 eV shift of the Si 2p peak to higher binding energy. 9,10 The broad Si 2p spectral weight in the ∼100-102 eV range, which evolves upon exposure to Cl 2 at 120 K, suggests that Si 1+ (i.e., Si-Cl) and Si 2+ (Si-Cl 2 ) and possibly some Si 3+ (Si-Cl 3 ) species are present in the near surface region. This experimental observation is similar to that observed in prior studies where Si(111), for example, was exposed to Cl 2 .…”

Section: Discussionmentioning

confidence: 98%

Thermal Chemistry of Chlorine on Si/Cu(100)

et al. 2000

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Photoelectron spectroscopy (PES) and temperature-programmed desorption (TPD) studies investigated the chemistry of Cl2 on Si/Cu(100). Si deposition was carried out by exposing Cu(100) to SiH4 at 420 K. PES showed that the exposure of this Si-saturated surface to Cl2 resulted in the formation of SiCl, SiCl2, and SiCl3 species at 120 K, with the latter species becoming more prevalent at higher Cl coverages. Heating of the chlorinated surface between 120 and 500 K increased the concentration of SiCl3 species. TPD studies of Cl2/Si/Cu(100) as a function of Si coverage showed primarily SiCl3 (and probably SiCl2) desorption at the lower Si coverages and SiCl4 at the highest Si coverage. The majority of the Si was not removed from the surface as chlorosilane product, but instead diffused into the Cu bulk at temperatures above 500 K.

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“…9,16 -30 Previous experimental studies on this system include temperature programmed desorption ͑TPD͒, 16 -19 laser-induced thermal desorption ͑LITD͒, 17 electron energy loss spectroscopy ͑EELS͒, 20 x-ray photoemission spectroscopy ͑XPS͒, 16,21 ultraviolet photoemission spectroscopy ͑UPS͒, 9,22,23 surface extended x-ray absorption fine structure ͑SEXAFS͒, 24 nearedge x-ray adsorption fine structure ͑NEXAFS͒, 25,26 scanning tunneling microscopy ͑STM͒, [27][28][29] and sticking measurements using molecular beams. 30 These studies have shown that Cl 2 dissociatively chemisorbs on the Si͑111͒-7ϫ7 surface.…”

Section: Introductionmentioning

confidence: 99%

The effect of incident energy upon adsorbate structure for Cl2 chemisorption onto Si(111)-7×7 surfaces

Yan

Jensen

Kummel

1995

The Journal of Chemical Physics

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Articles you may be interested inScanning tunneling microscopy of the effect of incident energy upon chemisorption sites for O2/Si(111)7×7 Summary Abstract: Chemisorption of silanes on the Si(111)(7×7) surface J. Vac. Sci. Technol. A 5, 628 (1987); 10.1116/1.574648 Summary Abstract: Ge deposition on Si(111)7×7 and Si(100)2×1: Effects on Si surface structure Summary Abstract: SEXAFS studies of I adsorbed on Si(111)7×7 and Ge(111)2×8Scanning tunneling microscopy ͑STM͒ and molecular beam techniques are used to investigate the effect of adsorption mechanism upon adsorbate structures for Cl 2 chemisorption onto Si͑111͒-7ϫ7 surfaces. At incident energies less than 0.11 eV, the SiCl island formation as well as isolated-site reaction are observed. STM images of the internal structure of the islands show that the SiCl islands nucleate at sublimation defects and not at step edges. Conversely, for 0.44 eV dosing, only the isolated-site reaction occurs. It is proposed that the island formation results from precursor mediated chemisorption and that the isolated-site reaction results from direct activated chemisorption. For direct activated chemisorption, the competition between Cl-atom abstraction and dissociative chemisorption was also observed. The abstraction probability decreases with increasing Cl 2 incident translational energy.

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Electronic properties and bonding sites for chlorine chemisorption on Si(111)-(7×7)

Cited by 121 publications

References 50 publications

Chlorination of hydrogen-terminated silicon (111) surfaces

Chlorination of hydrogen-terminated silicon (111) surfaces

Thermal Chemistry of Chlorine on Si/Cu(100)

The effect of incident energy upon adsorbate structure for Cl2 chemisorption onto Si(111)-7×7 surfaces

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