2014
DOI: 10.1103/physrevlett.112.047601
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Electronic Properties and Metrology Applications of the DiamondNVCenter under Pressure

Abstract: The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the optical and spin resonances of the NV- center are observed under hydrostatic pressures up to 60 GPa. Our results motivate powerful new techniques to measure pressure and image high-pressure magnetic and electric phenomena. Additionally, molecular orbital analysis and semiclassical calculations provide insight into the effects of compression on the electronic orbitals of the NV- center.

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Cited by 401 publications
(372 citation statements)
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“…This allows for the detection of changes in the stray magnetic field [3,[13][14][15][16][17] generated by the piezomagnetic material due to an external stress. We find that the effect of pressure on the NV-center spin can be enhanced by three orders of magnitude when compared to the effect of the direct application of stress on the diamond [8]. However, as the NV center lies close to the magnetic material, the magnetic noise is also expected to become more significant and deteriorate the measurement sensitivity.…”
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confidence: 86%
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“…This allows for the detection of changes in the stray magnetic field [3,[13][14][15][16][17] generated by the piezomagnetic material due to an external stress. We find that the effect of pressure on the NV-center spin can be enhanced by three orders of magnitude when compared to the effect of the direct application of stress on the diamond [8]. However, as the NV center lies close to the magnetic material, the magnetic noise is also expected to become more significant and deteriorate the measurement sensitivity.…”
mentioning
confidence: 86%
“…By solving the Langevin equation using the stochastic Heun scheme [34], we calculate the effective stray magnetic field acting on the NV center, and observe a prominent resonance frequency shift in the ODMR spectra, see Fig.2, the shift of ∆ = ω +1 − ω −1 is approximately linear with the stress, and the gradient is about d∆/dσ ∼ 17MHz/MPa for d = 15 nm, which is about three orders of magnitude larger than the shift of the zero-field splitting parameter D under a direct pressure [8]. The enhancement would be more significant for shallower NV, e.g.…”
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confidence: 91%
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“…Given the observed 3 E ODMR linewidths, this shift indicates a projected pressure sensitivity of ∼ 8(1) MPa Hz −1/2 , which is comparable to the ∼ 0.6 MPa Hz −1/2 sensitivity of the ground state ODMR. 13 The absence of contributions of electron-phonon interactions is theoretically interesting and also explains why the relative shift of D e.s. is much smaller than D g.s.…”
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confidence: 99%