2023
DOI: 10.1088/1402-4896/acccb3
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Electronic properties and passivation mechanism of AlGaN/GaN heterojunction with vacancies: a DFT study

Abstract: A significant issue for GaN-based high-electron-mobility transistors (HEMTs) in high power devices is the material defect, particularly the defect states generated by the defects, which has a negative impact on the device carrier concentration and carrier transport. Based on density functional theory (DFT), we investigate the microscopic properties of different type point vacancies in the AlGaN/GaN heterojunction. It is found that N vacancy introduces defect states near the conduction band minimum (CBM) of the… Show more

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