Electronic properties of a 3C∕4H SiC polytype heterojunction formed on the Si face

Chandrashekhar, M. V. S.; Thomas, Christopher I.; Lu, Jie; Spencer, Michael G.

doi:10.1063/1.2730738

Cited by 23 publications

(13 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Basing on these theoretical predictions, the electronic properties of SiC heteropolytype junctions, in which a 3C-SiC layer was grown either on the C-or on the Si-terminated face of hexagonal SiC, were recently investigated by Chandrashekhar et al [148,149] using capacitance-voltage (C-V) and Hall measurements. Following these studies, a 2DEG was experimentally observed for the first time in 3C-SiC/6H-SiC (C-face) heterostructures [150].…”

Section: Interfaces Considering Different Sic Polytypesmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Abstract. Wide band gap semiconductors promise devices with performances not achievable using silicon technology. Among them, Silicon Carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency requested in the modern society. In spite of the significant progresses achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices building blocks. The selected topics include the major concerns related to the electronic transport in metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions, and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

show abstract

Section: Interfaces Considering Different Sic Polytypesmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Therefore as alternative, hexagonal SiC substrates have been proposed using different growth techniques. In this case new electronic devices can be envisaged since due to abrupt changes in spontaneous polarization in the hexagonal SiC, two-dimensional electron or hole gas can be formed at the interface [5,6]. Even if stress in the 3C layer is considerably reduced using hexagonal-SiC instead of Si as substrate, other defects such as double positioning boundaries (DPB) and SF are still present in the 3C material.…”

Section: Introductionmentioning

confidence: 99%

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

Henry

Jacobson

et al. 2013

MSF

View full text Add to dashboard Cite

“…The 3C polytype could still be of interest for its high electron drift velocity (calculated to be above 2x10 7 cm/s) [1] and electron mobility (about 1000 cm 2 /Vs) [2], a fact which will have some advantages for MOSFET devices. Higher quality 3C layers can be grown on the most common SiC hexagonal-polytype substrates, which has been demonstrated by vapor-liquid-solid (VLS) [3], sublimation epitaxy [4] and chemical-vapordeposition (CVD) [5][6][7][8]. However, double-position-boundaries (DPB) which is a twinning of the grown layer, is still a problem in thin 3C epilayers grown on hexagonal substrates.…”

Section: Introductionmentioning

confidence: 99%

CVD Growth of 3C-SiC on 4H-SiC Substrate

Henry

Kordina

et al. 2012

MSF

View full text Add to dashboard Cite

Abstract. The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 1350 °C. The ramp up-conditions and the gas-ambient atmosphere when the temperature increases are key factors for the quality of the obtained 3C layers. The best pre-growth ambient found is carbon rich environment; however time of this pre-treatment is crucial.A too high C/Si ratio during growth led to polycrystalline material whereas for too low C/Si ratios Si cluster formation is observed on the surface. The addition of nitrogen gas is also explored.

show abstract

Electronic properties of a 3C∕4H SiC polytype heterojunction formed on the Si face

Cited by 23 publications

References 9 publications

Nanoscale transport properties at silicon carbide interfaces

Nanoscale transport properties at silicon carbide interfaces

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

CVD Growth of 3C-SiC on 4H-SiC Substrate

Contact Info

Product

Resources

About