Electronic properties of Bi2Se3 crystals

Hyde, G.R.; Beale, H.A.; Spain, Ian L.; Woollam, John A.

doi:10.1016/s0022-3697(74)80186-1

Cited by 67 publications

(61 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The nature of the conduction-band minimum has been studied experimentally [20] and it is consistent with our results. The experimental data on the nature of the valence-band maximum are, however, limited because of the difficulty of making the p-doped samples.…”

supporting

confidence: 89%

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Mishra

Satpathy

Jepsen

1997

J. Phys.: Condens. Matter

494

357

View full text Add to dashboard Cite

Abstract. The electronic structures of the two thermoelectric materials Bi 2 Te 3 and Bi 2 Se 3 are studied using density-functional theory with the spin-orbit interaction included. The electron states in the gap region and the chemical bonding can be described in terms of ppσ interaction between the atomic p orbitals within the 'quintuple' layer. For Bi 2 Se 3 , we find both the valenceband maximum as well as the conduction-band minimum, each with a nearly isotropic effective mass, to occur at the zone centre in agreement with experimental results. For Bi 2 Te 3 , we find that the six valleys for the valence-band maximum are located in the mirror planes of the Brillouin zone and they have a highly anisotropic effective mass, leading to an agreement between the de Haas-van Alphen data for the p-doped samples and the calculated Fermi surface. The calculated conduction band, however, has only two minima, instead of the six minima indicated from earlier experiments. The calculated Seebeck coefficients for both p-type and n-type materials are in agreement with the experiments.

show abstract

supporting

confidence: 89%

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Mishra

Satpathy

Jepsen

1997

J. Phys.: Condens. Matter

494

357

View full text Add to dashboard Cite

show abstract

“…4,18 It is known that a Se-rich mixture usually results in a reduced carrier concentration in the bulk, as is the case in our reference sample with a carrier concentration of ∼ 10 17 cm −3 . In order to get a rather high carrier concentration and low bulk mobility, we used a stoichiometric mixture of Bi (99.999%) and Se (99.99%), which was cooled down slowly at 3…”

Section: Methodsmentioning

confidence: 68%

“…The surface conducting state in Bi 2 Se 3 is difficult to separate from the spurious bulk conductivity, believed to originate from Se vacancies. [4][5][6] Even in the lowest carrier-concentration samples metallic bulk behavior is observed. A few successful attempts to surmount this problem were reported, including thinning down the 3D material to decrease the bulk contribution, 7-10 using gate voltage, 11,12 pulsed high magnetic fields, 13 and changing the material composition to reduce the bulk conductivity.…”

Section: Introductionmentioning

confidence: 99%

Probing the surface states in Bi2Se3using the Shubnikov–de Haas effect

et al. 2012

View full text Add to dashboard Cite

Shubnikov-de Haas oscillations are observed in Bi 2 Se 3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass, and Dingle temperature. The Fermi momentum obtained is in agreement with angle-resolved photoemission spectroscopy measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic fields. The standard theoretical considerations fail to explain the observed behavior.

show abstract

“…Bi 2 Se 3 ordinarily forms n-type specimens, so that more literature on n-type is available. Typical n-type mobilities at or even somewhat above these concentrations [35][36][37][38][39][40][41] are in this range or higher, so that assuming no great asymmetry in n-type vs p-type scattering rates, the assumed p-type mobilities are reasonable. The assumed carrier concentration dependence implies that mobility increases significantly as carrier concentration decreases, which is generally true until one reaches a limiting value, as in Ref.…”

Section: Calculation Of Optimal Doping Ranges and Potential Perfomentioning

confidence: 96%

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

Parker

Singh

2011

Phys. Rev. X

View full text Add to dashboard Cite

We present an analysis of the potential thermoelectric performance of hole-doped Bi 2 Se 3 , which is commonly considered to show inferior room temperature performance when compared to (2008).]) the material may show optimized ZT values of unity or more in the 300-500 K temperature range and thus be suitable for cooling and moderate temperature waste heat recovery and thermoelectric solar cell applications. Central to this conclusion are the larger band gap and the relatively heavier valence bands of Bi 2 Se 3 .

show abstract

Electronic properties of Bi2Se3 crystals

Cited by 67 publications

References 18 publications

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Probing the surface states in Bi2Se3using the Shubnikov–de Haas effect

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

Contact Info

Product

Resources

About