Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures

Barkissy, Driss; Nafidi, A.; Boutramine, Abderrazak; Charifi, H.; Elanique, A.; Massaq, M.

doi:10.1007/s10909-015-1437-0

Cited by 10 publications

(9 citation statements)

References 23 publications

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“…The superlattice (SL) is an artificial material consisting of alternating thin layers of two or more different components. The (GaAs) n /(AlAs) m is one of the most important SL since the development of high electron mobility transistors (HEMT) and quantum cascade lasers (QCLs) a few decades ago [ 1 – 6 ]. Recently with the advances of film epitaxy and nanofabrication techniques, the (GaAs) n /(AlAs) m based SLs and nanodevices with (n + m) ranging from 2 to 10 have demonstrated exciting physical properties related to luminescence and optical absorption, two-phonon absorption, and Raman as well as infrared spectra, which thus found promising applications in optoelectronics, sensing, LED, energy and laser related civilian and industrial areas [ 7 – 12 ].…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

et al. 2018

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Advanced semiconductor superlattices play important roles in critical future high-tech applications such as aerospace, high-energy physics, gravitational wave detection, astronomy, and nuclear related areas. Under such extreme conditions like high irradiative environments, these semiconductor superlattices tend to generate various defects that ultimately may result in the failure of the devices. However, in the superlattice like GaAs/AlAs, the phase stability and impact on the device performance of point defects are still not clear up to date. The present calculations show that in GaAs/AlAs superlattice, the antisite defects are energetically more favorable than vacancy and interstitial defects. The AsX (X = Al or Ga) and XAs defects always induce metallicity of GaAs/AlAs superlattice, and GaAl and AlGa antisite defects have slight effects on the electronic structure. For GaAs/AlAs superlattice with the interstitial or vacancy defects, significant reduction of band gap or induced metallicity is found. Further calculations show that the interstitial and vacancy defects reduce the electron mobility significantly, while the antisite defects have relatively smaller influences. The results advance the understanding of the radiation damage effects of the GaAs/AlAs superlattice, which thus provide guidance for designing highly stable and durable semiconductor superlattice based electronic and optoelectronics for extreme environment applications.

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Section: Introductionmentioning

confidence: 99%

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

et al. 2018

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“…molecular beam epitaxy and metal-organic vapour phase epitaxy) 1 . The semiconductor (GaAs) m /(AlAs) n superlattices (SLs), in which m and n denote the number of stacking periodicity, have been widely applied in various optoelectronic devices, due to their unusual physical properties related to luminescence and optical absorption, etc [2][3][4][5][6][7] . Despite extensive studies on the electronic and optical properties of GaAs/AlAs SLs, such as band gap and absorption coefficient, there still lacks a comprehensive understanding of the effect of stacking periodicity on the optoelectronic properties of GaAs/AlAs SLs for its application as near infrared detector.…”

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confidence: 99%

“…Ferhat et al calculated the energy gap of (GaAs) 1 /(AlAs) 1 SL employing the empirical pseudopotential method, which was reported to be 2.066 eV 1 . Barkissy et al studied the electronic structures of GaAs/AlAs SL at 4.2 K based on the envelope function formalism 4 . The direct band gap was found to be dependent on the temperature and decreased with the temperature increasing 4 .…”

mentioning

confidence: 99%

“…Barkissy et al studied the electronic structures of GaAs/AlAs SL at 4.2 K based on the envelope function formalism 4 . The direct band gap was found to be dependent on the temperature and decreased with the temperature increasing 4 . Botti et al combined density functional theory (DFT) and semi-empirical method to study the band structures of (GaAs) m /(AlAs) m SL, who found that for all sizes (m ≥ 1) the band gap was direct 3 .…”

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confidence: 99%

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Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study

Jiang

Xiao

Peng

et al. 2020

Sci Rep

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(GaAs) m /(AlAs) 1 superlattices with the layer of GaAs increasing, which is beneficial for their applications as near infrared detector. Besides, the maximum values of reflectivity of all SLs are much larger than those for bulk states. This study shows that the stacking periodicity of GaAs has remarkable effects on the electronic and optical properties of GaAs/AlAs SLs and varying the layer number of GaAs/AlAs SLs can be used to tune these properties effectively. Methods All the DFT calculations are implemented in Vienna Ab Initio Simulation Package (VASP) 32. The ion-electron interactions are treated by the projector augmented-wave pseudopotentials 33,34 , and the local-density approximation (LDA) in the form of Ceperly-Alder 35 is employed to describe the exchange-correlation functional. The convergence criteria for total energies and forces are 10 −5 eV and 10 −5 eV/Å, respectively. A cutoff energy of 500 eV and a 4 × 4 × 4 k-points are employed in these calculations. Three types of GaAs/AlAs SLs, i.e., (GaAs) m / (AlAs) m, (GaAs) 1 /(AlAs) m and (GaAs) m /(AlAs) 1 (m = 1 to 5), are considered. Figure 1 illustrates the geometries of the representative (GaAs) 2 /(AlAs) 2 SL.

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“…Recently, Jiang et al found Ga and Al atoms in GaAs/AlAs SLs are more susceptible to the radiation than those in the bulk AlAs and GaAs, in which the created defects have a profound effect on the electronic properties of GaAs/AlAs SLs (even metallicity are induced in some cases) [ 14 ]. Barkissy et al reported the band gap of GaAs/AlAs SLs performed in the envelope function formalism with respect of thickness ratio [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m, n ≤ 10) Superlattices Based on Density Functional Theory Calculations

Liu

Zhao

et al. 2018

Nanomaterials

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As important functional materials, the electronic structure and physical properties of (GaAs)m(AlAs)n superlattices (SLs) have been extensively studied. However, due to limitations of computational methods and computational resources, it is sometimes difficult to thoroughly understand how and why the modification of their structural parameters affects their electronic structure and physical properties. In this article, a high-throughput study based on density functional theory calculations has been carried out to obtain detailed information and to further provide the underlying intrinsic mechanisms. The band gap variations of (GaAs)m(AlAs)n superlattices have been systematically investigated and summarized. They are very consistent with the available reported experimental measurements. Furthermore, the direct-to-indirect-gap transition of (GaAs)m(AlAs)n superlattices has been predicted and explained. For certain thicknesses of the GaAs well (m), the band gap value of (GaAs)m(AlAs)n SLs exponentially increases (increasing n), while for certain thicknesses of the AlAs barrier (n), the band gap value of (GaAs)m(AlAs)n SLs exponentially decreases (increasing m). In both cases, the band gap values converge to certain values. Furthermore, owing to the energy eigenvalues at different k-points showing different variation trends, (GaAs)m(AlAs)n SLs transform from a Γ-Γ direct band gap to Γ-M indirect band gap when the AlAs barrier is thick enough. The intrinsic reason for these variations is that the contributions and positions of the electronic states of the GaAs well and the AlAs barrier change under altered thickness conditions. Moreover, we have found that the binding energy can be used as a detector to estimate the band gap value in the design of (GaAs)m(AlAs)n devices. Our findings are useful for the design of novel (GaAs)m(AlAs)n superlattices-based optoelectronic devices.

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Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures

Cited by 10 publications

References 23 publications

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study

A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m, n ≤ 10) Superlattices Based on Density Functional Theory Calculations

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