2015
DOI: 10.1007/s12043-015-1014-8
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Electronic properties of GaV4S8: A percolation approach

Abstract: Two polycrystalline V 4 -cluster compounds of GaV 4 S 8 were prepared at different annealing temperatures (GaV 4 S 8 -1 sintered at 800 • C and GaV 4 S 8 -2 sintered at 500 • C). Their temperature-dependent resistivity and structural phase transformation temperature (45 K for GaV 4 S 8 -1 and 43 K for GaV 4 S 8 -2) are found to be very sensitive to the annealing condition. Above 320 K, activation energy ε 3 is calculated to be ∼0.23 eV which decreases to ∼0.18 eV around 300 K in GaV 4 S 8 -1 and GaV 4 S 8 -2 o… Show more

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Cited by 3 publications
(2 citation statements)
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“…The resistance can be described by ρ ~ exp(T0/T) 1/4 with an exponent parameter T0  610 5 K (solid line in the right inset of Figure 2). There is a number of reports on the resistivity behavior of polycrystalline GaV4S8 [20,21,33,34,35]. In polycrystalline samples, the decrease of the resistivity above the JT transition is not as strong as documented in Figure 2 and the step at the JT transition is well below one decade [35].…”
Section: High-temperature Magnetic Electric and Thermodynamic Propermentioning
confidence: 94%
See 1 more Smart Citation
“…The resistance can be described by ρ ~ exp(T0/T) 1/4 with an exponent parameter T0  610 5 K (solid line in the right inset of Figure 2). There is a number of reports on the resistivity behavior of polycrystalline GaV4S8 [20,21,33,34,35]. In polycrystalline samples, the decrease of the resistivity above the JT transition is not as strong as documented in Figure 2 and the step at the JT transition is well below one decade [35].…”
Section: High-temperature Magnetic Electric and Thermodynamic Propermentioning
confidence: 94%
“…There is a number of reports on the resistivity behavior of polycrystalline GaV4S8 [20,21,33,34,35]. In polycrystalline samples, the decrease of the resistivity above the JT transition is not as strong as documented in Figure 2 and the step at the JT transition is well below one decade [35]. At room temperature, all these studies find energy barriers of the order of 0.14 eV, which decreases significantly on cooling.…”
Section: High-temperature Magnetic Electric and Thermodynamic Propermentioning
confidence: 96%