Electronic Properties of Graphene–PtSe2 Contacts

Sattar, Shahid; Schwingenschlögl, Udo

doi:10.1021/acsami.7b00012

Cited by 47 publications

(36 citation statements)

References 37 publications

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“…1(e and f ) between the component layers is unusal. [30][31][32] Our results show that an n-type Schottky contact is formed in SeMoS/Ge and a p-type Schottky contact in SMoSe/Ge. The SBHs of the heterostructures are given by 33…”

Section: Introductionmentioning

confidence: 99%

Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Zhao

Schwingenschlögl

2020

Nanoscale

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Section: Introductionmentioning

confidence: 99%

Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Zhao

Schwingenschlögl

2020

Nanoscale

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“…PtSe 2 /G has a tunable layerdependent Schottky barrier. 30 The traditional backgate MoS 2 eld effect transistor with ion gel dielectrics has a rather low carrier mobility of 0.5-20 cm 2 V À1 s À1 , while the characteristics of high mobility from graphene and high on-off ratio from MoS 2 are properly balanced in the MoS 2 /graphene heterojunction based FET with an on-off ratio of 105 and a carrier mobility of 58.7 cm 2 V À1 s À1 . [31][32][33] Different interlayer orientations might form in the synthesis of multilayer 2D materials, and interlayer orientation may affect the electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Robust quasi-ohmic contact against angle rotation in noble transition-metal-dichalcogenide/graphene heterobilayers

Hou

Han

et al. 2017

RSC Adv.

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Stacked 2D crystals provide great possibilities to achieve desired functionalities with varying thickness and composition properties. In this work, the electronic properties of heterobilayers of noble transition-metaldichalcogenide (PdS 2 , PtS 2 )/graphene with interlayer rotation angles are systematically investigated by density functional theory calculations. The two layers are combined by weak van der Waals interactions. Each component preserves its band structure in the hybrid system. A charge transference occurs at the interface of the bilayers leading to p-type doping for graphene and n-type doping for PdS 2 (PtS 2 ).Schottky barriers ranging from 0 eV to 0.057 eV appear in both heterobilayers with different orientations between the two monolayers. These results suggest that PdS 2 (PtS 2 )/graphene heterobilayers have quasi-ohmic contact against interface angle rotation.

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“…8 A class of van der Waals heterojunction structure-artificially stacking layers with different kinds of 2D materials, representing a new class of 2D materials. [9][10][11] In contrast to traditional semiconductor, in which the heterojunction can be formed under lattice matching condition only, lattice mismatch can be ignored when stacking different 2D materials into heterojunction, thus providing a platform for improving the photoactive applications and further understanding the carrier dynamics in 2D materials. [12][13] Many heterojunctions have been designed and fabricated such as Gr/TMDs in recent years.…”

Section: Introductionmentioning

confidence: 99%

Hot Carrier Transfer in graphene/PtSe2 Heterostructure Tuned by Built-in Electric Field

Ma¹,

Zhang²,

Wang³

et al. 2021

Preprint

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Van der Waals heterojunction involving graphene (Gr) with transition metal dichalcogenides (TMDs) is regard as a promising structure for their outstanding performance in optical and optoelectronic response. The electron-hole thermalization has been deemed to be the main reason for the sub-bandgap-excitation charge transfer from Gr to TMDs. However, the role of the intricate interlayer interaction of the Gr and the TMDs still require intensive investigation. Here, we have investigated the photocarrier dynamics in 5-layer PtSe2/Gr heterojunction by using time-resolved optical pump and terahertz probe spectroscopy. Interestingly, after photoexcitation, electron transfer from PtSe2 to Gr in PtSe2/Gr/substrate heterojunction has been demonstrated successfully, by contrast, no observable charge transfer occurs in the Gr/PtSe2/substrate heterostructure. The prominent difference for the different stacking sequence between Gr and PtSe2 can be ascribed to the effective built-in field introduced by fused silica substrate. A physical picture accounting for built-in electric field introduced by substrate has been proposed to interpret the charge transfer process in the TMD/Gr heterostructure–the substrate built-in electric field plays a dominated role for controlling the charge transfer pathway in the TMDs/Gr heterojunction. This study not only shed the light to the substrate engineering but also provide a new insight into the dynamic in Gr/TMDs heterojunction, which provides a new method to optimize the performance of photodetection.

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Electronic Properties of Graphene–PtSe₂ Contacts

Cited by 47 publications

References 37 publications

Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Robust quasi-ohmic contact against angle rotation in noble transition-metal-dichalcogenide/graphene heterobilayers

Hot Carrier Transfer in graphene/PtSe2 Heterostructure Tuned by Built-in Electric Field

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