2014
DOI: 10.1016/j.physb.2014.03.022
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Electronic properties of hemispherical quantum dot/wetting layer with and without hydrogenic donor impurity

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Cited by 18 publications
(19 citation statements)
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“…As presented in our previous work [10] , the hemispherical shape has been observed for islands formed during the growth of InAs on a GaAs substrate by Leonard et al [11] . Moreover, Solomon et al [12] have reported vertically coupled InAs/GaAs QDs grown by molecular beam epitaxy in the Stranski-Krastanov growth mode.…”
supporting
confidence: 59%
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“…As presented in our previous work [10] , the hemispherical shape has been observed for islands formed during the growth of InAs on a GaAs substrate by Leonard et al [11] . Moreover, Solomon et al [12] have reported vertically coupled InAs/GaAs QDs grown by molecular beam epitaxy in the Stranski-Krastanov growth mode.…”
supporting
confidence: 59%
“…These semiconductor nanostructures with discrete subbands have been used in applications such as quantum information processing [1] and infrared photodetectors [2] . Some of the recent works on the QDs are optical properties of a box-shaped QD [3] , a spherical QD with a position-dependent effective mass [4] , a multilayered spherical QD [5] , exciton effects on the optical properties of a disk-like QD under electric [6] and magnetic [7] fields, optical properties of a hydrogenic impurity in an ellipsoidal QD with an electric field [8] , electronic and optical properties of a conical QD [9] , electronic and optical properties of a hemispherical QD (HQD)/wetting layer (WL) with and without hydrogenic impurities [10] .…”
mentioning
confidence: 99%
“…Therefore, the total electric field E MSQD = f e (ω)E 0 and f e (ω) is the local enhance field factor: f e (ω) = f 2 + f 3 (ω). The MNP enhances the nonlinear third-order susceptibility for a two-level quantum system which is given as χ (3) (10) where N is the carrier density. To calculate QEOE and EA, we put ω 1 = 0, ω 2 = −ω in Eq.…”
Section: Theorymentioning
confidence: 99%
“…Possible uses include devices for applications in quantum computing [6], devices for biological application [7], and devices for emission and absorption of light in optoelectronic applications [8]. So far, the nonlinear optical properties of QDs have been widely studied [9][10][11]. In this field, a great deal of theoretical and experimental interest has been devoted to the study of the nonlinear optical properties which are associated with inter-subband optical transitions in quantum dots with different structures presented in scientific literatures.…”
Section: Introductionmentioning
confidence: 99%
“…Nowadays, it is well established that the optical properties along with electronic properties of low-dimensional semiconductors can be affected in the presence of hydrogenic donor impurity [8,9]. On the other hand, survey of literatures shows that external perturbation such as hydrostatic pressure could immensely alter both optical and electronic properties of lowdimensional semiconductors [10,11].…”
Section: Introductionmentioning
confidence: 99%