Electronic properties of ion-bombarded evaporated germanium and silicon

Hopping mechanism of electric transport in intrinsic and p-doped nanocrystalline silicon thin films

“…4) is due to the different values of the prefactor (Table 3). This weak dependence of r 00 with the temperature and the field is in agreement with the results of Apsley et al [15] and Godet et al [16], who pointed out that r 00 may vary within a factor of 2 for low and intermediate fields.…”

High-field transport in amorphous carbon and carbon nitride films

“…Apsley et al [11] assumed that r 00 ðF Þ is nearly fieldindependent, at least for usual F values. However, our experimental results (Fig.…”

The effects of optical irradiation and ion bombardment on amorphous tellurium

“…We find that if the data are force-fitted to log Rw(&/T)l/" then To = 1.5 x 10" K for the film as deposited and To = 2.5 x lo9 K following bombardment. Using the model of Apsley and Hughes (1974) with a localization length of lo& the corresponding densities of neutral defects at the Fermi level are 6 x stateseV-' cm-3 for the pristine film and 3.5 x 10l6 stateseV-l cm-3 for bombarded material. Though conduction in these a-Te films appears to be via the same mechanism as for the group IV and V elements studied, the density of defects responsible is much lower in a-Te than in the other materials.…”