Eur. Phys. J. Plus
 2024
DOI: 10.1140/epjp/s13360-023-04753-0
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Electronic properties of ionizing radiation-induced defects at SiO$$_2$$/Si interface associated with non-trivial excess current splitting

Binghuang Duan,
Cen Xiong,
Hang Zhou
et al.
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