Electronic Properties of Materials

Hummel, Rolf E.

doi:10.1007/978-94-017-4914-5

Cited by 104 publications

(60 citation statements)

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“…The OSC's bulk IE (labeled in Figure as ionization potential or IP) is seen to be unaffected by doping. Doping shifts the Fermi energy toward the HOMO level, as expected for p‐type doping in standard semiconductor theory . Doping also reduces the depletion region width, as expected, since the increase in mobile charge density results in more effective charge screening.…”

Section: Introductionsupporting

confidence: 54%

“…The ionized p‐ and n‐type impurities left behind act as scattering centers and broaden the DOS . In inorganics, where doping is efficient and intentional doping levels are ppm–ppt, this effect minimally affects performance, and as a result compensation doping is widely used in industry . In organic materials, where intentional doping levels are typically on the order of percent due to low doping efficiency, it is likely that compensation may result in significant performance degradation.…”

Section: Controlling Defects and Impurities With Dopantsmentioning

confidence: 99%

“…This gap gives a semiconductor all of the electronic and optical properties that make it unique from a metal. If the band gap becomes too large (3–4 eV) then the material is considered an insulator because the barrier to charge transport is too high . Recently, a vast amount of basic and applied research has focused on organic semiconductors (OSCs), which have several features that offer improved performance over inorganic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Controlling Molecular Doping in Organic Semiconductors

2017

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The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping.

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Section: Introductionsupporting

confidence: 54%

Section: Controlling Defects and Impurities With Dopantsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Controlling Molecular Doping in Organic Semiconductors

2017

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“…Using the current values of pentacene measured from this structure and Eq. (1), we could obtain the electrical conductivity: Where L is the effective area of for current flow, S the thickness of the channel layer, and R is resistance, respectively 7. Like the result obtained from the physical properties of AFM and XRD, the electrical conductivity characteristic also shows that the value of 100 °C is higher than that of other temperature (Fig.…”

Section: Resultsmentioning

confidence: 73%

Influence of post‐deposition annealing of PVP/pentacene films on characteristics of organic thin film transistors

Kim

Yoo

Jeong

et al. 2010

Physica Status Solidi (a)

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Phone: þ82 31 290 7134, Fax: þ82 31 290 7941We report the roles of post-deposition annealing of PVP/ pentacene double-layered films on the electrical properties of organic thin film transistors (OTFTs). Data obtained by atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques demonstrate that both the grain size and the (001) peak intensity of pentacene films increase as the annealing temperature increases, resulting in clear dendrite structure after annealing at 100 8C in N 2 ambient. These physical properties were also confirmed by electrical conductivity (EC) of pentacene films. The electrical properties of OTFTs were improved with increasing the annealing temperature in general: Especially, mobility and on/off ratio of the OTFTs subjected to the 100 8C annealing process were 0.32 cm 2 /Vs and 10 6 , respectively, which were both improved at least one order of magnitude as compared to those measured from the samples without annealing.

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“…Upon removal of applied load (at 7 MPa), a small amount of domains do not completely switch to their unloaded orientations and keep the new configuration, leading to a remnant (residual) texture. However, sample could not reach MRD 002 = 3 (which would correspond to “full” polarization) due to inter‐domain and inter‐grain constraints that prevent the full realignment of all domains along a given applied stress direction within the applied load amplitudes before sample failure.…”

Section: Resultsmentioning

confidence: 99%

Strain Evolution of Highly Asymmetric Polycrystalline Ferroelectric Ceramics via a Self‐Consistent Model and In Situ X‐Ray Diffraction

et al. 2012

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Strain and texture evolution (domain switching) of polycrystalline, ferroelectric BaTiO 3 was investigated in four-point bending geometry. Lattice strains were measured by in situ synchrotron X-ray diffraction to address problems related to modeling the constitutive behavior of highly asymmetric ferroelectrics. The hkl-dependent strain measured by X-ray diffraction was found to be smaller relative to both bulk strain measured by conventional, contact-based techniques and elastically computed strain, and reasons for this inconsistency are discussed. A self-consistent model with capabilities of quantifying domain switching and estimating hkl-dependent strain is applied to allow a direct comparison with diffraction data.

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Electronic Properties of Materials

Cited by 104 publications

References 0 publications

Controlling Molecular Doping in Organic Semiconductors

Controlling Molecular Doping in Organic Semiconductors

Influence of post‐deposition annealing of PVP/pentacene films on characteristics of organic thin film transistors

Strain Evolution of Highly Asymmetric Polycrystalline Ferroelectric Ceramics via a Self‐Consistent Model and In Situ X‐Ray Diffraction

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