Electronic properties of p-GaN co-doped with Mn by thermal process: Surface studies

Properties of Thin Film-Covered GaN(0001) Surfaces

“…The results of Mn thin films on the GaN(0001) surfaces concerning structural characterization by STM were reported in Refs. [15][16][17], whereas the physicochemical properties of Mn on GaN(0001) were studied by the author using XPS and UPS with non-monochromatic excitation sources in works [22][23][24].…”

“…(Mn)GaN films obtained that way show ferromagnetic behaviour [87]. Experiments examining the changes in physicochemical properties of the films on the GaN(0001) crystals under the influence of annealing were presented in the author's works [23,24]. In Ref.…”

“…The potential to modify the VB of GaN by dissolving Mn thermal initiation was applied to p-GaN(0001) by the author in Ref. [24]. By annealing the Mn film-covered p-GaN under UHV conditions, Mn was dissolved in the subsurface layer of the p-GaN, similarly as was described above in the case of non-doped GaN.…”

“…XPS and UPS results of the work [24] are presented in Figure 12, which shows changes in the Ga-3d and N-1s core level lines caused by the manganese incorporation. The Ga-3d is located at 19.1 and 18.7 eV before and after the Mn incorporation, respectively.…”

“…It was found that Mn is a very attractive material for creating a ferromagnetic MnGaN semiconductor by molecular beam epitaxy (MBE) [11,12] and therefore for creating hybrid systems with spintronic potential [13,14]. Mn on GaN was studied using the scanning tunnelling microscopy (STM) technique [15][16][17][18][19] as well as by photoemission experiments [20][21][22][23][24]. Thin films of Ni on GaN were studied in the works [25][26][27][28][29][30][31].…”