Electronic Properties of Semiconducting Silicides

Lange, H.

doi:10.1002/1521-3951(199705)201:1<3::aid-pssb3>3.0.co;2-w

Cited by 243 publications

(102 citation statements)

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“…We did not observe any nonlinear variation of the Hall voltage with magnetic field. 29 Sample A had a hole concentration p of 3.0 Â 10 19 cm À3 and a hole mobility l h of 1.3 cm 2 /VÁs. In contrast, b-FeSi 2 grown via atomic-hydrogen-assisted MBE had a much lower carrier concentration and a much higher carrier mobility.…”

Section: Resultsmentioning

confidence: 99%

Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

Akutsu

Kawakami

Suzuno

et al. 2011

Journal of Applied Physics

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We have epitaxially grown undoped b-FeSi 2 films on Si(111) substrates via atomic-hydrogen-assisted molecular-beam epitaxy. b-FeSi 2 films grown without atomic hydrogen exhibited p-type conduction with a hole density of over 10 19 cm À3 at room temperature (RT). In contrast, those prepared with atomic hydrogen showed n-type conduction and had a residual electron density that was more than two orders of magnitude lower than the hole density of films grown without atomic hydrogen (of the order of 10 16 cm À3 at RT). The minority-carrier diffusion length was estimated to be approximately 16 lm using an electron-beam-induced current technique; this value is twice as large as that for b-FeSi 2 prepared without atomic hydrogen. This result could be well explained in terms of the minority-carrier lifetimes measured by a microwave photoconductance decay technique. The 1/e decay time using a 904 nm laser pulse was approximately 17 ls, which is much longer than that for b-FeSi 2 prepared without atomic hydrogen (3 ls). The photoresponsivity reached 13 mA/W at 1.31 lm, which is the highest value ever reported for b-FeSi 2 films.

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Section: Resultsmentioning

confidence: 99%

Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

Akutsu

Kawakami

Suzuno

et al. 2011

Journal of Applied Physics

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“…The 4πM S value obtained for F = 3 and 4 nm (1.69 T) is reduced as compared with the 4πM S value of the bulk Fe (2.158 T) [22]. In turn, the nonmagnetic Fe-Si phases, which can be taken into account to appear at Fe/Si interface are β-FeSi 2 (orthorhombic, semiconducting), α-FeSi 2 (tetragonal, metallic), -FeSi (B20, semiconducting) and FeSi (B2, metallic) [23,24]. In order to find the transport properties of the Fe 0 33 Si 0 66 (it simulates FeSi 2 phases) and Fe 0 50 Si 0 55 (it simulates FeSi phases) the two 30 nm thick single layers were prepared [25].…”

Section: The Properties Of Si Sublayersmentioning

confidence: 99%

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

Luciński

Chomiuk

2011

Open Physics

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We review selected results concerning the interlayer exchange coupling in Fe/SixFe1−x , Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.

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“…β-FeSi2 thin films on Si substrate show photoluminescence (PL) at 1.54 μm, which is a wavelength for fiber optics communications [1,2]. The semiconducting β-FeSi2 with orthorhombic structure is formed after a moderate distortion of the CaF2 structure by the Jahn-Teller effect [3].…”

Section: Introductionmentioning

confidence: 99%

Dependence of direct transition energy on growth temperature in β-FeSi₂ epitaxial films

Iinuma

Tsukamoto

Murakoso

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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Direct transition energy (Eg) of β-FeSi2/Si(111) epitaxial films grown at different growth temperatures (Ts) was investigated by photoreflectance (PR) measurements. In Raman spectra, the wavenumber of Ag-mode in Fe-Fe and Si-Si vibrations shifted to higher wavenumber with decrease of Ts. The estimated Si/Fe composition ratio of the epitaxial layer became small (Si-poor) in the films grown at lower Ts. In PR spectra, Eg shifted to higher energy with decrease of Ts. These results show that the modification of electronic structure by a strain induced at β-FeSi2/Si hetero-interface is suppressed by an increase of Si vacancies in β-FeSi2.

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Electronic Properties of Semiconducting Silicides

Cited by 243 publications

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Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

Dependence of direct transition energy on growth temperature in β-FeSi₂ epitaxial films

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Electronic Properties of Semiconducting Silicides

Cited by 243 publications

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Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films

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Dependence of direct transition energy on growth temperature in β-FeSi₂ epitaxial films