Electronic properties of the III-VI layer compounds GaS, GaSe and InSe

Piacentini, M.; Olson, C. G.; Balzarotti, A.; Girlanda, R.; Grasso,; Doni, E.

doi:10.1007/bf02908240

Cited by 39 publications

(2 citation statements)

References 25 publications

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“…Single nanowire absorption measurements by EELS (Figure 6(a−c)) show a characteristic energy loss onsetassociated with interband transitions across the fundamental bandgapat E g = 2.65 eV, close to the previously reported bandgap of GaS. 37,38 Features between 3 and 10 eV are likely associated with special points in the GaS dielectric function seen previously, 39,40 while the peak at ∼17 eV has been explained by an excitation of the GaS bulk plasmon. 8,41 At low energy (in the gap region), the spectra show structure with intensity above the noise level whose energy coincides with emission features observed in CL (see below), i.e., which may be associated with losses due to transitions between gap states.…”

Section: Resultssupporting

confidence: 86%

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

et al. 2020

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Nanowires of layered van der Waals (vdW) crystals are of interest due to structural characteristics and emerging properties that have no equivalent in conventional 3D crystalline nanostructures. Here, vapor−liquid−solid growth, optoelectronics, and photonics of GaS vdW nanowires are studied. Electron microscopy and diffraction demonstrate the formation of high-quality layered nanostructures with different vdW layer orientation. GaS nanowires with vdW stacking perpendicular to the wire axis have ribbon-like morphologies with lengths up to 100 μm and uniform width. Wires with axial layer stacking show tapered morphologies and a corrugated surface due to twinning between successive few-layer GaS sheets. Layered GaS nanowires are excellent wide-bandgap optoelectronic materials with E g = 2.65 eV determined by single-nanowire absorption measurements. Nanometer-scale spectroscopy on individual nanowires shows intense blue band-edge luminescence along with longer wavelength emissions due to transitions between gap states and photonic properties such as interference of confined waveguide modes propagating within the nanowires. The combined results show promise for applications in electronics, optoelectronics, and photonics, as well as photo-or electrocatalysis owing to a high density of reactive edge sites, and intercalation-type energy storage benefiting from facile access to the interlayer vdW gaps.

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Section: Resultssupporting

confidence: 86%

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

et al. 2020

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“…GaSe is a layered semiconductor, having highly anisotropic physical, electronic, and optical properties. The bulk material has an indirect band gap at about 2.1 eV and a direct transition at Γ at slightly higher energy. − GaSe nanoparticles consist of single tetra-layer disks; Se−Ga−Ga−Se. Particles ranging in diameter from 2.5 to 12 nm have been synthesized. , The size-dependent static spectroscopy is reasonably well understood.…”

Section: Introductionmentioning

confidence: 99%

Superradiance in GaSe Nanoparticle Aggregates

Mogyorósi

Kelley

2006

J. Phys. Chem. C

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Transient absorption results are presented on two types of GaSe nanoparticle aggregates. The results indicate that both types of aggregates exhibit larger emission oscillator strengths than the corresponding monomers, that is, superradiance. One type of GaSe nanoparticle is synthesized by conventional methods, and the other is synthesized at room temperature from very small GaSe particle nuclei. The latter type of particles form very strongly interacting aggregates, presumably because they have fewer edge-binding ligands. In both cases, the extent of superradiance is inferred from the stimulated emission band in the transient absorption spectrum. Oscillator strength ratios (n-aggregate/n monomers) are 1.5 and 1.8-2.0 for the conventional and cold-synthesized aggregates, respectively. These ratios can be quantitatively understood in terms of an electrostatic coupling model and random inhomogeneous broadening in the aggregates.

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Unveiling the Stimulated Robust Carrier Lifetime of Surface‐Bound Excitons and Their Photoresponse in InSe

Wang

Jiang

Gao

et al. 2019

Adv Materials Inter

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In contrast to zero‐bandgap metallic graphene, the binary semiconducting compound, InSe, possesses a tunable bandgap. Herein, a range of particle sizes of β‐InSe from bulk to few‐layer nanosheets and quantum dots are carefully prepared. The size‐dependent bandgap variation and photon‐induced carrier dynamics of InSe are systemically investigated. In contrast to the normal size‐dependent carrier lifetime trend observed at 700 nm, anomalous size‐independent carrier decay is observed at 500 nm. Through time‐dependent density functional theory calculations, the normal carrier lifetimes at lower probe photon energies are attributed to in‐plane excitons, whereas the abnormal size‐independent carrier lifetimes at higher probe photon energies are found to be stimulated by surface‐bound excitons. In view of the robust surface exciton, this suggests that InSe may possess an outstanding optoelectronic performance in the shorter wavelength range. Through photoelectrochemical detection experiments, it is confirmed that InSe features a high photocurrent density and stability and, in particular, a more distinct photoresponse at short wavelengths than at longer ones. Comprehending and quantifying the role of the surface‐bound excitons in InSe across a broad range of semiconductor nanostructures and their fundamental properties may play an important role in understanding the physical properties of 2D III–VI compound materials.

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Electronic properties of the III-VI layer compounds GaS, GaSe and InSe

Cited by 39 publications

References 25 publications

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

Superradiance in GaSe Nanoparticle Aggregates

Unveiling the Stimulated Robust Carrier Lifetime of Surface‐Bound Excitons and Their Photoresponse in InSe

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