Electronic properties of the topological insulators Bi₂Se₃ and Bi₂Te₃

Abstract

<p>The three-dimensional topological insulators Bi₂Se₃ and Bi₂Te₃ are model systems of a new class of materials with an insulating bulk and gapless surface states. Their small band gaps and the heavy elements are essential for the topologically non-trivial band structure, but these features are similarly responsible for other remarkable properties, such as their high thermoelectric performance. This thesis investigates the electronic properties of the topological insulators Bi₂Se₃ and Bi₂Te₃ with a broad range of experimental methods. Ferromagnetism in Mn doped Bi₂Te₃ is shown to disappear under sample sintering. A surprisingly large magnetoresistance and a charge carrier independent change in the sign of the thermopower with increasing Mn content are discussed.¹²⁵Te nuclear magnetic resonance (NMR) of Bi₂Te₃ single crystals suggest an unusual electronic spin susceptibility and complex NMR shifts. The quadrupole interaction of ²⁰⁹Bi nuclei in Bi₂Se₃ single crystals is shown to be a signature of the band inversion in quantitative agreement with first-principle calculations. Furthermore, it is proposed that the strong spin-orbit coupling of conduction electrons causes a non-trivial orientation dependent quadrupole splitting of the ²⁰⁹Bi resonance.</p>