Electronic properties of thin SiO
            <sub>2</sub>
            films deposited at low temperatures by new ECR microwave PECVD process

Chau, T. T.; Mejia, S. R.; Kao, K. C.

doi:10.1049/el:19890728

Cited by 6 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The changes, in both the structure and the electronic propRecently, several techniques for low-temperature deposition erties of the films, wits deposition temperature are also of SiO, films have been reported such as the radio frequency discussed, (rf) PECVD ( 1 ), the rf remote chemical vapor deposition (CVD) (2), the microwave down-stream CVD (3j, and'the microwave electron cyclotron resonance (ECR) PECVD (4). The quality of the SiO, films prepared by these techniques at about 300°C is close to that of high-quality thermal oxides with the average breakdown strength higher than 9 MV cm-and the interface trap density of the order of 10" cm-2 eV-for films with thicknesses below 600A (1 A = lo-'' m).…”

Section: Introductionmentioning

confidence: 99%

The effects of deposition temperature on properties of SiO₂ films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

Chau¹,

Mejia²,

Kao³

1991

Can. J. Phys.

View full text Add to dashboard Cite

Silicon dioxide (SiO,) films were deposited by a new electron cyclotron resonance (ECR) microwave plasma enhanced chemical vapor deposition (PECVD) process at various deposition temperatures ranging from room temperaure (-25°C) to 300°C. The deposition rate increases with increasing deposition temperature and tends to become saturated as the deposition temperature approaches 250°C, in contrast to the SiOz films fabricated by the conventional ECR microwave PECVD process. The Fourier transform infrared results provide no evidence of hydrogen incorporation in the SiOz films even when they were deposited at room temperature. Films deposited at temperatures higher than 270°C exhibit an excellent electrical integrity that is comparable with high-quality SiOz films grown thermally at 1000°C. Films deposited at room temperature have a slightly higher refractive index and also high-leakage current though the films appear as good as those deposited at 300°C. As the deposition temperature is increased, both the shoulder height of the S i -4 stretching band and the leakage current decrease. The correlation between the film properties and the film growth mechanism is also discussed.Des films de SiOz ont CtC dtposts, suivant un nouveau proctdC PECVD a microondes RCE, a difftrentes temptratures allant de la temperature ambiante (-25°C) jusqu'a 300°C. La vitesse de dCpBt croit avec la temperature et tend a devenir saturte lorsque la temptrature approche de 250"C, contrairement aux films fabriques suivant le proceqt PECVD B microondes RCE conventionnel. Les resultats de mesures FTIR ne fournissent aucune preuve d'incorporation d'hydrogkne dans les films de SiOz, m&me lorsqu'ils sont dCposCs temperature ambiante. Les films dtposts a des temperatures superieures a 270°C prtsentent une inttgritk Clectrique excellente, comparable celle des films SiO, de haute qualitt obtenus par croissance thermique a I 000°C. Les films deposes a temperature ambiante ont un indice de refraction 1Cgkrement plus ClevC et aussi un plus grand courant de fuite, bien que ces films paraissent aussi bons que ceux dCposCs 300°C. Lorsque la temptrature de dCpGt est augmentke, la hauteur a I'tpaulement de la bande d'ttirement de Si-0 et le courant de fuite diminuent tous les deux. La correlation entre les proprietks des films et leur mecanisme de croissance est aussi discutCe.[Traduit par la redaction]

show abstract

Section: Introductionmentioning

confidence: 99%

The effects of deposition temperature on properties of SiO₂ films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

Chau¹,

Mejia²,

Kao³

1991

Can. J. Phys.

View full text Add to dashboard Cite

show abstract

“…Plasma enhanced chemical vapor deposition (PECVD) techniques of various modification have been extensively investigated in recent years for low temperature deposition of thin insulating thin films, particularly, SiO 2 films [1][2][3][4]. However, with the PECVD techniques, the effects of the energetic particles such as electrons, ions and photons created in the plasma on the quality of the deposited films can not be ignored.…”

Section: Introductionmentioning

confidence: 99%

Properties of SiO₂ Films Fabricated by Microwave ECR Plasma Processing with and without Energetic Particle Bombardment During Film Deposition. Part II: Electronic Properties

1991

View full text Add to dashboard Cite

ABSTRA~T Silicon dioxide (SiO 2 ) films were fabricated by microwave ECR plasma processing at 300 'C, the range of the film thicknesses being 200 -300 A. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the plasma so that the substrates as well as the on-growing films were subjected to bombardment of energetic particles produced in the plasma, and group B with the substrates placed in a processing chamber physically separated from the plasma chamber in order to prevent or suppress the damaging effects resulting from these energetic particle bombardment. It has been found that group A films are poor in both the capacitance-voltage (C-V) and the current-voltage (I-V) characteristics, possibly due to dust particles created by the gas phase reaction of SiHl 4 and ionic bombardment and radiation damage during film deposition.Group B films, on the other hands, exhibit good electronic properties. On the basis of their I-V and C-V characteristics, group B films yield an average breakdown strength of about 10 MV/cm, an oxide bulk charge density on the order of 1014 q/cm 3 and an interface trap density on the order of 1011 cm-2 eV-1 which are approaching those of high quality thermally grown oxides and they are suitable for use as gate insulator for MOS devices.

show abstract

Thin Film Deposition

El-Kareh

1995

Fundamentals of Semiconductor Processing Technology

View full text Add to dashboard Cite

Electronic properties of thin SiO ₂ films deposited at low temperatures by new ECR microwave PECVD process

Cited by 6 publications

References 0 publications

The effects of deposition temperature on properties of SiO₂ films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

The effects of deposition temperature on properties of SiO₂ films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

Properties of SiO₂ Films Fabricated by Microwave ECR Plasma Processing with and without Energetic Particle Bombardment During Film Deposition. Part II: Electronic Properties

Thin Film Deposition

Contact Info

Product

Resources

About

Electronic properties of thin SiO 2 films deposited at low temperatures by new ECR microwave PECVD process

Cited by 6 publications

References 0 publications

The effects of deposition temperature on properties of SiO2 films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

The effects of deposition temperature on properties of SiO2 films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

Properties of SiO2 Films Fabricated by Microwave ECR Plasma Processing with and without Energetic Particle Bombardment During Film Deposition. Part II: Electronic Properties

Thin Film Deposition

Contact Info

Product

Resources

About

Electronic properties of thin SiO ₂ films deposited at low temperatures by new ECR microwave PECVD process

The effects of deposition temperature on properties of SiO₂ films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

The effects of deposition temperature on properties of SiO₂ films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

Properties of SiO₂ Films Fabricated by Microwave ECR Plasma Processing with and without Energetic Particle Bombardment During Film Deposition. Part II: Electronic Properties