Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1−xAlxN

Abstract

Articles you may be interested inWhispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots Appl. Phys. Lett. 102, 081105 (2013); 10.1063/1.4793653 Erratum: "Ab initio study of lattice vibration and polaron properties in zinc-blende AlxGa1−xN alloys" [J. Appl. Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga 1−x Al x N J. Appl. Phys. 93, 9730 (2003); 10.1063/1.1573739 Deposition factors and band gap of zinc-blende AlNThe electronic properties of wide-energy gap zinc-blende structure GaN, AlN, and their alloys Ga 1Ϫx Al x N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at ⌫ and those of the conduction band at ⌫ and X are obtained for GaN and AlN, respectively. The energies of ⌫, X, L conduction valleys of Ga 1Ϫx Al x N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application.

Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

“…It is also found that the nature of bandgap for the full compositional range of Ga in Al 1−x Ga x N ͑0 Յ x Յ 1͒ is direct ͑E g ⌫−⌫ ͒. Our results are in agreement with the experimental ones, 23 and are in contradiction with the experimental 20,21 as well as theoretical 18,19,21,22 results. They are of the opinion that the bandgap of the compound is indirect at ͑⌫ − X͒ symmetry points.…”

“…Bandgap nature of Al 1−x Ga x N ͑0 Յ x Յ 1͒ is controversial. Experimental evidences 20,21 and theoretical calculations 18,19,21,22 suggest that the bandgap of Al 1−x Ga x N ͑0 Յ x Յ 1͒ is indirect for all concentration of Ga. While the experimental results of Ref.…”

“…18, 19, and 21, LDA and in Ref. 22 empiricalpseudopotential method are used. But it has been confirmed that generalized gradient approximation ͑GGA͒ is far more superior for calculation of bandgaps than LDA.…”

Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well

“…24,25 Other attributes of III-nitride systems are that their energy gaps can be varied over a wide range and these systems have high electron mobilities and heat conductivities and in addition, for example, GaN has a high breakdown voltage and a small dielectric coefficient. 7,26,27 The InGaN/GaN single and/or multiquantum wells have been used as active layers for blue lightemitting diodes and laser diodes. InGaN multiple quantum wells (MQWs) grown on sapphire substrates have been demonstrated and there are many reports on the optical investigation of InGaN/GaN quantum well structure.…”

Defeitos Nativos e Impureza de Berílio em Nitreto de Boro Cúbico

“…3.5 para as respectivas massas efetivas dos buracos, obtemos os valores para os parâmetos de Luttinger do c-BN, os quaiS estão apre sentados na tabela 3.6, onde também inserimos os valores correspondentes a esses mesmos parâmetros para os compostos GaN e AIN, extraídos da referência [89]. É interessante notar que a medida que se aumenta a massa atômica do cátion, o composto exibe valores maiores para os parâmetros de Comparativamente aos estudos de defeitos e ímpurezas em Si, GaAs, GaP e outrOS semicondutores, aqueies realizados em BN estão em sua infancia, Apesar da importância tecnológica e em Física básica deste material, apenas recentemente alguns trabalhos mais detalhados sobre defeitos começaram a ser publicados.…”