Electronic Spin of the Ga Vacancy in GaP

Kennedy, T. A.; Wilsey, N. D.; Krebs, J. J.; Stauss, G. H.

doi:10.1103/physrevlett.50.1281

Cited by 57 publications

(20 citation statements)

References 13 publications

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“…3 A similar high-spin ground state is also found for the neutral vacancy V Ga 0 in GaP. 4 Like diamond and GaP, silicon carbide is a wide-band-gap material. Several observations obtained from electron-spin-resonance ͑ESR͒, optically detected magnetic-resonance ͑ODMR͒, photoluminescence ͑PL͒, and electron-nuclear double-resonance ͑ENDOR͒ measurements assigned to silicon vacancy-related centers, high-spin states Sϭ1 and Sϭ3/2 have been reported.…”

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confidence: 75%

“…1 Coulson and Larkins 5 predicted a high-spin ground-state 4 A 2 (a 1 2 t 2 3 ) for the vacancy V C 1Ϫ in diamond, which is not subject to Jahn-Teller distortion. The many-electron singlet 4 A 2 is stabilized by a strong exchange coupling ͑spin-spin interaction͒, which is larger than the corresponding Jahn-Teller energy. For the vacancy in diamond, the 4 A 2 state has been confirmed experimentally.…”

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confidence: 99%

“…1 Even though the ground state of the vacancy in silicon can be qualitatively described within a single-electron picture, 2 it is found in some wide-band-gap semiconductors, such as diamond and GaP, 3,4 that finally, many-electron effects determine the electronic properties of the vacancy. According to the oneelectron model, the defect molecular orbitals are an a 1 singlet and a t 2 triplet.…”

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confidence: 99%

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Silicon vacancy in SiC: A high-spin state defect

Torpo

Nieminen

Laasonen

et al. 1999

Applied Physics Letters

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We report results from spin-polarized ab initio local spin-density calculations for the silicon vacancy (V Si ) in 3C-and 2H-SiC in all its possible charge states. The calculated electronic structure for SiC reveals the presence of a stable spin-aligned electron-state t 2 near the midgap. The neutral and doubly negative charge states of V Si in 3C-SiC are stabilized in a high-spin configuration with Sϭ1 giving rise to a ground state, which is a many-electron orbital singlet 3 T 1 . For the singly negative V Si , we find a high-spin ground-state 4 A 2 with Sϭ3/2. In the high-spin configuration, V Si preserves the T d symmetry. These results indicate that in neutral, singly, and doubly negative charge states a strong exchange coupling, which prefers parallel electron spins, overcomes the Jahn-Teller energy. In other charge states, the ground state of V Si has a low-spin configuration.

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Silicon vacancy in SiC: A high-spin state defect

Torpo

Nieminen

Laasonen

et al. 1999

Applied Physics Letters

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“…4,5 According to them, although the sample is initially p-type the irradiation moves the Fermi level to a midgap position. In p-type and undoped GaP the best agreement was found by matching V Ga −2 with the data.…”

Section: B Gallium Vacancymentioning

confidence: 99%

“…The experimental methods used have so far been electron spin resonance experiments ͑ESR͒ ͓or electron paramagnetic resonance ͑EPR͔͒, [1][2][3][4][5][6][7][8] deep-level transient spectroscopy ͑DLTS͒, 9-11 optical detection of magnetic resonance ͑ODMR͒, [12][13][14][15] and finally positron annihilation for the detection of vacancies. 16,17 These studies almost always deal with one specific defect at a time so further discussion of them will be left to the relevant parts of Sec.…”

Section: Introductionmentioning

confidence: 99%

Relative concentration and structure of native defects in GaP

2005

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The native defects in the compound semiconductor GaP have been studied using a pseudopotential density functional theory method in order to determine their relative concentrations and the most stable charge states. The electronic and atomic structures are presented and the defect concentrations are estimated using calculated formation energies. Relaxation effects are taken into account fully and produce negative-U charge transfer levels for V P and P Ga . The concentration of V Ga is in good agreement with the results of positron annihilation experiments. The charge transfer levels presented compare qualitatively well with experiments where available. The effect of stoichiometry on the defect concentrations is also described and is shown to be considerable. The lowest formation energies are found for P Ga +2 in p-type and V Ga −3 in n-type GaP under P-rich conditions, and for Ga P −2 in n-type GaP under Ga-rich conditions. Finally, the finite size errors arising from the use of supercells with periodic boundary conditions are examined.

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Intrinsic Point Defects in Semiconductors 1999

Watkins

2013

Materials Science and Technology

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The sections in this article are Introduction Silicon Defect Production The Silicon Vacancy Electronic Structure Effects of Lattice Relaxation – General Considerations Electrical Level Positions of the Vacancy Vacancy Migration Vacancy Interactions with other Defects The Silicon Interstitial Interstitial Migration Trapped Interstitials Theory of the Silicon Interstitial Close Frenkel Pairs Other Group IV Semiconductors Germanium Diamond Si C II – VI Semiconductors Zn Se The Zinc Vacancy Zinc Vacancy Diffusion and Interaction with other Defects Interstitial Zinc and Close Frenkel Pairs Defects on the Selenium Sublattice Other II – VI Materials The Metal Vacancy The Chalcogen Vacancy The other Intrinsic Defects Theory III – V Semiconductors Antisites The Anion Antisite V III The Cation Antisite III V Group‐ III Atom Vacancies Metal Interstitials Defects on the Group‐ V Sublattice Summary and Overview Summary Group IV Semiconductors II – VI Semiconductors III – V Semiconductors Overview Vacancies Interstitials Antisites Migration Barriers Acknowledgements

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Electronic Spin of the Ga Vacancy in GaP

Cited by 57 publications

References 13 publications

Silicon vacancy in SiC: A high-spin state defect

Silicon vacancy in SiC: A high-spin state defect

Relative concentration and structure of native defects in GaP

Intrinsic Point Defects in Semiconductors 1999

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