Electronic Sputtering of Thin Conductors by Neutralization of Slow Highly Charged Ions

Schenkel, T.; Briere, M. A.; Schmidt‐Böcking, H.; Bethge, Κ.; Schneider, Dieter

doi:10.1103/physrevlett.78.2481

Cited by 56 publications

(37 citation statements)

References 26 publications

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“…219 In graphitic structures, v F =8ϫ 10 5 m / s, which, assuming hydrogen as a projectile, corresponds to ion energy of around 3 keV. Although the role of nonadiabaticity is, to some extent, smeared out due to good conducting properties of nanotubes, several attempts have been made to assess the role of electronic excitations in ion collisions with carbon nanostructures.…”

Section: F Time-dependent Dft Simulationsmentioning

confidence: 99%

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Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

944

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: F Time-dependent Dft Simulationsmentioning

confidence: 99%

“…Laser and light irradiation of solids first heats up the electronic system, 230,231 as does swift heavy ion irradiation. 104,114 Also slow highly charged ions 82,219 lead to a strong local electronic excitation of a material near the surface.…”

Section: G Phenomenological Descriptions Of Electronic Excitationmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

944

591

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“…Consequently, BH's angle dependent sputtering coefficients are C x (h) ¼ (1/2)(3h 2 À1) and C y (h) ¼ (1/2)(h 2 À1). 7 With C x (h) > C y (h) for all h, the BH criterion rules out the possibility of observing parallel ripples. However, rippling is observed in experiments for bombardment in Ge at 250 eV.…”

Section: B Profiles Of Deposited Energymentioning

confidence: 99%

“…One of the key unknowns is how the deposited ion energy is related to local sputtering of the target material, which can play a critical role in interpreting ion bombardment experiments as well as in theoretical explanations for the evolution of surface patterns. [4][5][6][7] An assumed ellipsoidal energy deposition and a hypothesized linear relation to sputtering are the basis of Sigmund's 4,5 model, which leads to curvature dependent sputtering and within Bradley and Harper's stability analysis predicts the formation of a rich range of nanometerscale surface morphologies. 6,[8][9][10][11] These models are consistent with several erosion related surface behaviors.…”

Section: Introductionmentioning

confidence: 99%

Ion impact energy distribution and sputtering of Si and Ge

Hossain

Freund

Johnson

2012

Journal of Applied Physics

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Structural characterization of CdSe/ZnS quantum dots using medium energy ion scattering Appl. Phys. Lett. 101, 023110 (2012) Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces Rev. Sci. Instrum. 83, 073304 (2012) Influence of ion source configuration and its operation parameters on the target sputtering and implantation process Rev. Sci. Instrum. 83, 063304 (2012) Note: Measuring effects of Ar-ion cleaning on the secondary electron yield of copper due to electron impact Rev. Sci. Instrum. 83, 066105 (2012) Surface instability of binary compounds caused by sputter yield amplification J. Appl. Phys. 111, 114305 (2012) Additional information on J. Appl. Phys. The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This-along with the assumption of an ellipsoidal region of energy deposition-is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390(1988] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0 , 10 , 20 , 30 , 40 , 50 , 60 , 70 , and 80 ). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations. V C 2012 American Institute of Physics. [http://dx

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“…Highly charged ions carry considerable potential energy (the sum of the ionization potentials of the highly charged ion) to surfaces and this energy is released in the first few femtoseconds of surface interaction resulting in a highly localized energy deposition in the first few atomic layers of the surface 5 . In contrast is the case of singly charged ion induced secondary ion mass spectroscopy (SIMS) where most of the energy transferred to the surface comes from the kinetic energy of the projectile ion.…”

Section: Introductionmentioning

confidence: 99%

Surface charge compensation for a highly charged ion emission microscope

et al. 2004

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A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the Time-Of-Flight (TOF) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun enhanced HCI microscope are discussed.

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Electronic Sputtering of Thin Conductors by Neutralization of Slow Highly Charged Ions

Cited by 56 publications

References 26 publications

Ion and electron irradiation-induced effects in nanostructured materials

Ion and electron irradiation-induced effects in nanostructured materials

Ion impact energy distribution and sputtering of Si and Ge

Surface charge compensation for a highly charged ion emission microscope

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