Electronic State of High Spin MnAs

Haneda, Sho; Kazama, Noriaki; Yamaguchi, Yasuo; Watanabe, Hiroshi

doi:10.1143/jpsj.42.1201

Cited by 57 publications

(26 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since MnAs is a ferromagnet with Curie temperature at 318 K, 30 we conclude that the ferromagnetic signal comes from the MnAs, which has a saturated moment of 3.4 µ B /Mn. 31 The concentration of MnAs impurity in our samples can thus be estimated to be from 1 at.% to 6 at.%. This explains why the MnAs impurity sometimes cannot be found by the XRD experiments.…”

mentioning

confidence: 90%

Insulator-to-metal transition and large thermoelectric effect in La _1−x Sr _x MnAsO

Sun¹,

Bao²,

Luo³

et al. 2012

EPL

View full text Add to dashboard Cite

We report the Sr substitution effect in an antiferromagnetic insulator LaMnAsO. The Sr doping limit is x ∼ 0.10 under the synthesis conditions, as revealed by x-ray diffractions indicate. Upon Sr doping, the room-temperature resistivity drops by five orders of magnitude down to ∼0.01 Ω·cm, and the temperature dependence of resistivity shows essentially metallic behavior for x ≥0.08. Hall and Seebeck measurements confirm consistently that the insulator-to-metal transition is due to hole doping. Strikingly, the room-temperature Seebeck coefficient for the metallic samples is as high as ∼ 240µV/K, making the system as a possible candidate for thermoelectric applications.

show abstract

mentioning

confidence: 90%

Insulator-to-metal transition and large thermoelectric effect in La _1−x Sr _x MnAsO

Sun¹,

Bao²,

Luo³

et al. 2012

EPL

View full text Add to dashboard Cite

show abstract

“…Inhomogeneities in the specimen were evident as microcracks were formed by the thermal cycles to measure the temperature dependence due to the strongly anisotropic thermal expansion of the material. 12 It was obviously impossible to determine the resistivity along specific crystal orientations. In the present study, we employ crystalline MnAs layers grown by molecular-beam epitaxy ͑MBE͒.…”

mentioning

confidence: 99%

Abrupt changes in the temperature coefficient of resistivity induced by the phase transitions in MnAs films on GaAs

Takagaki

Däweritz

2007

Phys. Rev. B

View full text Add to dashboard Cite

The scattering processes of conduction carriers in MnAs channels prepared on GaAs͑001͒ and GaAs͑111͒B substrates are investigated through the temperature dependence of the resistivity in the regime where MnAs undergoes two phase transitions. The temperature coefficient changes discontinuously at the phase transitions and is negative for the ␤ phase, indicating that a certain magnetic order exists in ␤-MnAs. The temperature dependence can be comprehensively understood if ␤-MnAs possesses an antiferromagetic order.

show abstract

“…In polycrystalline bulk MnAs, the resistance was reported to increase as temperature crosses T C due to the generation of microcracks by the phase-transition stress. 25,26 On the contrary, the resistance decreases with thermal cycles in Fig. 3, indicating an improvement in the material properties as if the sample were annealed.…”

Section: Discussionmentioning

confidence: 94%

Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunchedGaAs(331)B

et al. 2009

View full text Add to dashboard Cite

We demonstrate a manipulation of the first-order phase transition in a MnAs layer grown on step-bunched GaAs͑331͒B. The layer is composed of alternating ͑1100͒-and ͑1122͒-oriented segments, which grew on ͑110͒ terraces and sidewalls consisting of bunched steps, respectively. The shape of the thermal hysteresis curves in magnetization and resistance changes markedly with temperature cycles. The alteration is associated with improvements in the crystalline quality. Out-of-plane components of the phase-transition stress resulting from the nonplanar geometry of the layer are indicated to be the driving force for the annealinglike elimination of structural imperfections. Plastic flow of materials induced by the stress is evidenced to almost completely level the surface height modulations having an amplitude of about 50 nm.

show abstract

Electronic State of High Spin MnAs

Cited by 57 publications

References 16 publications

Insulator-to-metal transition and large thermoelectric effect in La _1−x Sr _x MnAsO

Insulator-to-metal transition and large thermoelectric effect in La _1−x Sr _x MnAsO

Abrupt changes in the temperature coefficient of resistivity induced by the phase transitions in MnAs films on GaAs

Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunchedGaAs(331)B

Contact Info

Product

Resources

About

Electronic State of High Spin MnAs

Cited by 57 publications

References 16 publications

Insulator-to-metal transition and large thermoelectric effect in La 1−x Sr x MnAsO

Insulator-to-metal transition and large thermoelectric effect in La 1−x Sr x MnAsO

Abrupt changes in the temperature coefficient of resistivity induced by the phase transitions in MnAs films on GaAs

Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunchedGaAs(331)B

Contact Info

Product

Resources

About

Insulator-to-metal transition and large thermoelectric effect in La _1−x Sr _x MnAsO

Insulator-to-metal transition and large thermoelectric effect in La _1−x Sr _x MnAsO