Electronic states and cyclotron resonance in<i>n</i>-type InMnAs

Sanders, G. D.; Sun, Y.; Kyrychenko, F. V.; Stanton, C. J.; Khodaparast, Giti A.; Zudov, M. A.; Kono, Junichiro; Matsuda, Yasuhiro H.; Miura, N.; Munekata, H.

doi:10.1103/physrevb.68.165205

Cited by 56 publications

(44 citation statements)

References 26 publications

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“…Spectroscopic studies of isolated Mn͑d 5 + hole͒ impurities in the infrared region provided key information on the valence of Mn in ͑Ga,Mn͒As, as discussed in Sec. II.B, and cyclotron resonance measurements were used to study highly Mn-doped DMS materials in this frequency range ͑Mitsumori et al, 2003;Sanders et al, 2003;Khodaparast et al, 2004͒. Microwave EPR and FMR experiments mentioned in Secs.…”

Section: Magneto-opticsmentioning

confidence: 99%

Theory of ferromagnetic (III,Mn)V semiconductors

et al. 2006

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The body of research on ͑III,Mn͒V diluted magnetic semiconductors ͑DMSs͒ initiated during the 1990s has concentrated on three major fronts: ͑i͒ the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ͑ii͒ the materials science of growth and defects, and ͑iii͒ the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, ͑Ga,Mn͒As and several other ͑III,Mn͒V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and postgrowth-treatment techniques have played a central role in the field, often pushing the limits of dilute Mn-moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In ͑III,Mn͒V compounds, material quality and magnetic properties are intimately connected. This review focuses on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magnetotransport, and magneto-optical characteristics of simple ͑III,Mn͒V epilayers, with the main emphasis on ͑Ga,Mn͒As. Conclusions are arrived at based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment. The applicability of ferromagnetic semiconductors in microelectronic technologies requires increasing Curie temperatures from the current record of 173 K in ͑Ga,Mn͒As epilayers to above room temperature. The issue of whether or not this is a realistic expectation for ͑III,Mn͒V DMSs is a central question in the field and motivates many of the analyses presented in this review.

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Section: Magneto-opticsmentioning

confidence: 99%

Theory of ferromagnetic (III,Mn)V semiconductors

et al. 2006

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“…10,11 While CR has been used to study MBE-grown ferromagnetic InMnAs with a GaSb buffer layer on a GaAs substrate with T c ranging from 30 to 50 K, 12 the CR in the these MBE-grown ferromagnetic structures had features significantly different from the ones reported in this work. Because the InMnAs/GaSb interface is a type-II interface, with electrons and holes confined on opposite sides of the heterojunction, it is possible that in the MBE-grown InMnAs structures, the CR could have originated from or been influenced by carriers at the interface layer between InMnAs and GaSb.…”

Section: Introductionmentioning

confidence: 53%

“…Details of our effective mass theory are described in Ref. 11. In that paper, we applied our theory to the study of n-type InMnAs alloys and compared our results with experimental CR measurements.…”

Section: Theory and Modelingmentioning

confidence: 88%

Cyclotron resonance in ferromagnetic InMnAs and InMnSb

et al. 2013

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We present experimental and theoretical studies of the magneto-optical properties of p-type In 1−x Mn x As and In 1−x Mn x Sb ferromagnetic semiconductor films in ultrahigh magnetic fields oriented along [001]. Samples were fabricated by molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE). To model the results, we used an 8-band Pidgeon-Brown model generalized to include the wave vector dependence of the electronic states along k z as well as the s-d and p-d exchange interactions with the localized Mn d electrons. The Curie temperature is taken as an input parameter and the average Mn spin is treated in mean-field theory. We compared Landau level and band structure calculations with observed cyclotron resonance (CR) measurements. While differences between the CR measurements are seen for MBE and MOVPE samples, our calculations indicate that they arise from differences in the carrier densities. In addition, the difference in the carrier densities suggests significantly larger average spin for the MOVPE structures; this fact could be responsible for higher Curie temperatures in this material system.

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“…In fact, with high enough Mn doping, one can change the sign of the electron g-factor as in seen InMnAs for high Mn doping. 61 In general, the Mn impurity interaction with a quantum dot state is large when there's a large overlap between its effective mass envelope function and the Mn impurities.…”

Section: B Mn Doped Cds-zns Nanoparticlesmentioning

confidence: 99%

Tuninggfactors of core-shell nanoparticles by controlled positioning of magnetic impurities

2016

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We present a theoretical platform for modeling the electronic and magneto-optic properties of magnetically doped core-shell nanoparticles that has, as a central prediction, a mechanism by which the g-factors in these nanoparticles can be tuned over a wide range by controlled positioning of magnetic impurities. We illustrate this effect for wide gap Mn-doped CdS-ZnS core-shell particles and point out several unexpected trends that merit extended experimental investigation. Structure-property relations are also discussed. The ability to tune g-factors will make core-shell nanostructures viable candidates for spintronic applications, and the comprehensive modeling approach outlined here will be a powerful tool for predicting their properties as well as for optimizing the design of novel spintronic devices.

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Electronic states and cyclotron resonance inn-type InMnAs

Cited by 56 publications

References 26 publications

Theory of ferromagnetic (III,Mn)V semiconductors

Theory of ferromagnetic (III,Mn)V semiconductors

Cyclotron resonance in ferromagnetic InMnAs and InMnSb

Tuninggfactors of core-shell nanoparticles by controlled positioning of magnetic impurities

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