Electronic states in heterostructures formed by ultranarrow layers

Abstract

Low-energy electronic states in heterosrtuctures formed by ultranarrow layers (single or several monolayers thickness) are studied theoretically. The host material is described within the effective mass approximation and effect of ultranarrow layers is taken into account within the framework of the transfer matrix approach. Using the current conservation requirement and the inversion symmetry of ultranarrow layer, the transfer matrix is evaluated through two phenomenological parameters. The binding energy of localized state, the reflection (transmission) coefficient for the single ultranarrow layer case, and the energy spectrum of superlattice are determined by these parameters. Spectral dependency of absorption due to photoexcitation of electrons from localized states into minibands of superlattice is determined by the ultranarrow layers characteristics. Such a dependency can be used for verification of the transfer matrix and should modify characteristics of optoelactronic devices with ultranarrow layers. Comparision with experimental data shows that the effective mass approach is not valid for description of ultranarrow layer.

Transiciones intrabandas en superredes semiconductoras dimerizadas

“…El avance en las técnicas de crecimiento epitaxial ha permitido obtener heteroestructuras cuyos espesores son de muy pocas capas atómicas. Esto ha originado una discusión sobre la validez de la aproximación de masa efectiva en la simulación de heteroestructuras con espesores de pocas capas atómicas [5]. En la que se reconsidera el papel de las matrices de transferencia para capas monoatómicas determinado por la conservación de la corriente y las propiedades de simetría de las monocapas.…”