The electronic states of NbSi
n
–/0/+ (n = 1–3) clusters
have
been explored using the state-of-the-art DMRG-CASPT2 method with
relatively large active spaces. The leading configurations, bond distances,
vibrational frequencies, and relative energies of the low-lying states
were identified. Electron detachment energies of the anionic cluster
and ionization energies of the neutral clusters were reported at the
DMRG-CASPT2 level. The ground states of the NbSi
n
–/0/+ (n = 1–3) clusters
were predicted as the 3Δ, 4Π, and 5Π states of the linear NbSi–/0/+,
the 3A2, 4B1, and 3B1 states of cyclic NbSi2
–/0/+, and the 1A′, 2A′, and 3A″ states of tetrahedral NbSi3
–/0/+ isomers. The first feature in the photoelectron spectrum of NbSi– was attributed to the transitions from the anionic 3Δ ground state to the neutral 4Π, 4Δ, and 4Φ states, whereas the second
feature was assigned to the transitions to the neutral 2Δ, 2Σ+, and 2Φ
states. The first band in the photoelectron spectrum of NbSi3
– was ascribed to the transition from the anionic 1A′ ground state to the neutral 12A′
and 12A″ states; the second band was attributed
to the transitions to 22A′, 22A″,
and 32A′ states; and the third band was assigned
to the transition to 32A′ states.