Electronic stopping power of slow H+ and He2+ ions in CdTe from first principle

Li, Chang-kai; Mao, Fei; Fu, Yanlong; Liao, Bin; Ouyang, Xiaoping

doi:10.1016/j.nimb.2016.12.017

Cited by 5 publications

(3 citation statements)

References 44 publications

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“…Recent RT-TDDFT studies on channelling conditions for proton impact have found a strong sensitivity of the ESP on crystal direction and impact parameter [ 32 ]. Deviations from velocity proportionality at very low velocity have also been obtained [ 32 , 33 ], consistent with the finite-velocity threshold observed in experiments [ 34 ]. Others have highlighted the different contributions of semicore electrons in channelling versus off-channelling conditions [ 35 ].…”

Section: Introductionsupporting

confidence: 81%

Ab initio electronic stopping power for protons in Ga _0.5 In _0.5 P/GaAs/Ge triple-junction solar cells for space applications

2020

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Motivated by the radiation damage of solar panels in space, firstly, the results of Monte Carlo particle transport simulations are presented for proton impact on triple-junction Ga 0.5 In 0.5 P/GaAs/Ge solar cells, showing the proton projectile penetration in the cells as a function of energy. It is followed by a systematic ab initio investigation of the electronic stopping power (ESP) for protons in different layers of the cell at the relevant velocities via real-time time-dependent density functional theory calculations. The ESP is found to depend significantly on different channelling conditions, which should affect the low-velocity damage predictions, and which are understood in terms of impact parameter and electron density along the path. Additionally, we explore the effect of the interface between the layers of the multilayer structure on the energy loss of a proton, along with the effect of strain in the lattice-matched solar cell. Both effects are found to be small compared with the main bulk effect. The interface energy loss has been found to increase with decreasing proton velocity, and in one case, there is an effective interface energy gain.

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Section: Introductionsupporting

confidence: 81%

Ab initio electronic stopping power for protons in Ga _0.5 In _0.5 P/GaAs/Ge triple-junction solar cells for space applications

2020

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“…As a result, the slope of the energy curve increases with projectile velocity. In other words, the slope represents the rate of energy loss from the projectile to target materials [7,12,13,46]. When an energetic proton passes through the target along the different trajectories, the total energy of the electron system shows different oscillation trends.…”

Section: Inversion Of Espmentioning

confidence: 99%

“…Time-dependent density functional theory (TDDFT) [8][9][10] and numerical computational techniques [11,12] accelerate the study of electrons and nuclei dynamics, enabling the quantitative research of nonadiabatic processes in the interaction of ions and solids. When the projectile in low velocity regime traverses in the metal, semiconductor and insulator, there exist various behaviors for ESP [13][14][15][16][17]. Theoretical study for the interaction of proton with metal Zn shows the significant contribution of d-electron excitation to the ESP [18].…”

Section: Introductionmentioning

confidence: 99%

Crossover of energy deposition and semi-stable chemical bonding in the nonadiabatic dynamics of GaN under proton irradiation

Deng

Feng

2023

J. Phys.: Condens. Matter

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Understanding the ion-solid interactions of charged particles in materials facilitates the development of ion beam irradiation techniques. Combining Ehrenfest dynamics and time-dependent density-functional theory (ED-TDDFT), we investigated the electronic stopping power (ESP) of an energetic proton in GaN crystal and studied the ultrafast dynamic interaction between the proton and target atoms during the nonadiabatic process. We found a crossover phenomenon of ESP at 0.36 a.u. along the <100> and <110> channels, which is interpreted by the charge transfer between the host material and the projectile and the stopping force exerted on the proton. At velocities of 0.2 and 1.7 a.u., we demonstrated that the reversal of the average number of charge transfer and the average axial force resulted in the reversed energy deposition rate and ESP in the corresponding channel. Further analysis of the evolution of non-adiabatic electronic states revealed the existence of the transient and semi-stable N-H chemical bonding during irradiation process, which is introduced by the electron clouds overlap of N sp3 hybridization and the s orbitals of the proton. These results provide meaningful information for the interactions between energetic ions with matter.

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Sensitivity of ion implantation to low-energy electronic stopping cross-sections

Cheng

Zheng

et al. 2023

Radiation Physics and Chemistry

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Electronic stopping power of slow H+ and He2+ ions in CdTe from first principle

Cited by 5 publications

References 44 publications

Ab initio electronic stopping power for protons in Ga _0.5 In _0.5 P/GaAs/Ge triple-junction solar cells for space applications

Ab initio electronic stopping power for protons in Ga _0.5 In _0.5 P/GaAs/Ge triple-junction solar cells for space applications

Crossover of energy deposition and semi-stable chemical bonding in the nonadiabatic dynamics of GaN under proton irradiation

Sensitivity of ion implantation to low-energy electronic stopping cross-sections

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Electronic stopping power of slow H+ and He2+ ions in CdTe from first principle

Cited by 5 publications

References 44 publications

Ab initio electronic stopping power for protons in Ga 0.5 In 0.5 P/GaAs/Ge triple-junction solar cells for space applications

Ab initio electronic stopping power for protons in Ga 0.5 In 0.5 P/GaAs/Ge triple-junction solar cells for space applications

Crossover of energy deposition and semi-stable chemical bonding in the nonadiabatic dynamics of GaN under proton irradiation

Sensitivity of ion implantation to low-energy electronic stopping cross-sections

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Product

Resources

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Ab initio electronic stopping power for protons in Ga _0.5 In _0.5 P/GaAs/Ge triple-junction solar cells for space applications

Ab initio electronic stopping power for protons in Ga _0.5 In _0.5 P/GaAs/Ge triple-junction solar cells for space applications