Electronic structure and chemical reaction of Ca deposition on regioregular poly(3-hexylthiophene) surfaces

Zhao, Wei; Guo, Yu-Xian; Feng, Xuefei; Zhang, Liang; Zhang, Wenhua; Zhu, Junfa

doi:10.1007/s11434-009-0184-5

Cited by 15 publications

(6 citation statements)

References 19 publications

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“…[47] After 0.04 nm Al deposition, both the original S 2p peaks (labelled as "unreacted S") of P3HT and graphene/P3HT shift slightly to higher binding energy side by 0.1 eV, which is attributed to the downward band bending due to the electron transfer from Al to the underlying substrate films. Similar band bending phenomena have also been observed for Ca/P3HT [48,49] and Li/P3HT. [46] In addition, a new doublet feature at a binding energy of 1.5 eV lower than the original peak (the blue shaded area, labeled as "reacted S") appears (Figure 4b and 4e).…”

Section: In-situ Srpes Experiments On Al/p3ht and Al/graphene/p3ht Insupporting

confidence: 82%

Engineering the metal–organic interface by transferring a high-quality single layer graphene on top of organic materials

Feng

Zhang

et al. 2015

Carbon

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We present a new method for transferring chemical vapor deposition (CVD)-grown graphene onto the surfaces of organic materials directly. Raman and near edge X-ray absorption fine structure measurements prove that high-quality and single layer graphene/organic thin films can be obtained with minimized impurity introduction. In-situ synchrotron radiation photoemission spectroscopy combined with ultraviolet photoelectron spectroscopy experiments demonstrate that the inserted graphene can not only act as a buffer layer to reduce the interfacial chemical reactions between the deposited Al and organic materials, but also tune the metal/organic interface electronic structure significantly. This new graphene transfer technique may have a great potential in the application of engineering the metal-organic interface properties, which is one of the key technologies for the optimal design and fabrication of organic electronic and optoelectronic devices.

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Section: In-situ Srpes Experiments On Al/p3ht and Al/graphene/p3ht Insupporting

confidence: 82%

Engineering the metal–organic interface by transferring a high-quality single layer graphene on top of organic materials

Feng

Zhang

et al. 2015

Carbon

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“…The beamline and endstation equipment have been described in detail previously. 53,54 Briefly, this beamline is connected to a bending magnet and equipped with three gratings that cover photon energies from 10 to 250 eV with a resolving power (E/ E) > 1000. The endstation is equipped with an ARUPS 10 electron analyzer.…”

Section: Methodsmentioning

confidence: 99%

Growth and electronic structure of Sm on thin Al2O3/Ni3Al(111) films

Cheng

et al. 2012

The Journal of Chemical Physics

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The growth and electronic structure of vapor-deposited Sm on a well-ordered Al(2)O(3)/Ni(3)Al(111) ultrathin film under ultrahigh vacuum conditions at room temperature have been studied comprehensively using synchrotron radiation photoemission spectroscopy, X-ray photoelectron spectroscopy, work function measurements, scanning tunneling microscopy, and low-energy electron diffraction. Our results indicate that at room temperature Sm grows in a layer-by-layer fashion up to at least 1 ML, followed by three-dimensional growth. The interaction of Sm with Al(2)O(3) thin films leads to an initial oxidation of Sm, accompanied by a parallel reduction of the Al(2)O(3) substrate. Both the oxidation states of Sm(2+) and Sm(3+) are found at low coverage (<1 ML). The concentration of Sm(2+) saturates below 0.4 ML, while that of Sm(3+) keeps increasing until the metallic state of Sm appears at high coverages.

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“…The endstation equipment has been described in detail previously [12,13]. Briefly, the U18 beamline is connected to a bending magnet and equipped with three gratings that cover photon energies from 10 to 250 eV with a resolving power (E/ΔE) > 1000.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial growth of ultrathin ZrO2(111) films on Pt(111)

et al. 2011

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Ordered epitaxial ZrO 2 films were grown on Pt(111) and characterized by low energy electron diffraction (LEED), synchrotron radiation photoemission spectroscopy (SRPES) and X-ray photoelectron spectroscopy (XPS). The films were prepared by vapor deposition of zirconium in an O 2 atmosphere followed by annealing under ultra high vacuum. At low coverages, the films grew as discontinuous two-dimentional islands with ordered structures. The size and structure of these islands were dependent on the coverage of ZrO 2 films. At coverage <0.5 monolayer (ML), ( )

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Electronic structure and chemical reaction of Ca deposition on regioregular poly(3-hexylthiophene) surfaces

Cited by 15 publications

References 19 publications

Engineering the metal–organic interface by transferring a high-quality single layer graphene on top of organic materials

Engineering the metal–organic interface by transferring a high-quality single layer graphene on top of organic materials

Growth and electronic structure of Sm on thin Al2O3/Ni3Al(111) films

Epitaxial growth of ultrathin ZrO2(111) films on Pt(111)

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