Electronic structure and electrical properties of Na-doped C60 thin films

Rhee, J. H.; Ha, Byeongchul; Sharma, S. C.

doi:10.1016/j.tsf.2008.06.066

Cited by 7 publications

(3 citation statements)

References 14 publications

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“…In order to improve their electrical properties, C 60 films can be changed to extrinsic semiconductor (n-type or p-type) materials by effective doping using various elements such as Na, P or B. [2][3][4] Locke et al studied phosphorus doping into fullerene C 60 using a combination of gas-solid reaction and coprecipitation from benzene solution. 4 In this work, phosphorus-doped C 60 (P:C 60 films were synthesized by a radio frequency (rf) plasma assisted thermal evaporation technique using C 60 powder as a carbon precursor and phosphine (PH 3 gas as a P source with various rf-plasma powers.…”

Section: Introductionmentioning

confidence: 99%

Structural Characteristics of Phosphorus-Doped C₆₀ Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

Arie

Lee²

2012

j nanosci nanotechnol

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Phosphorus doped C60 (P:C60) thin films were prepared by a radio frequency plasma assisted thermal evaporation technique using C60 powder as a carbon source and a mixture of argon and phosphine (PH3) gas as a dopant precursor. The effects of the plasma power on the structural characteristics of the as-prepared films were then studied using Raman spectroscopy, Auger electron spectroscopy (AES) and X-ray photo-electrons spectroscopy (XPS). XPS and Auger analysis indicated that the films were mainly composed of C and P and that the concentration of P was proportional to the plasma power. The Raman results implied that the doped films contained a more disordered carbon structure than the un-doped samples. The P:C60 films were then used as a coating layer for the Si anodes of lithium ion secondary batteries. The cyclic voltammetry (CV) analysis of the P:C60 coated Si electrodes demonstrated that the P:C60 coating layer might be used to improve the transport of Li-ions at the electrode/electrolyte interface.

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Section: Introductionmentioning

confidence: 99%

Structural Characteristics of Phosphorus-Doped C₆₀ Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

Arie

Lee²

2012

j nanosci nanotechnol

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“…The desired modification in semiconductor properties can be achieved by combination of materials [1][2][3][4][5]. At present, scientists are trying to improve the performance and customization of existing materials depending as per demand of industry.…”

Section: Introductionmentioning

confidence: 99%

Quantum Chemical Study of Fe Doped ZnO Nanoclusters

Siddiqui¹,

Abdullah²

2013

MNS

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Quantum chemical calculations have been carried out using Density Functional Theory (DFT) analysis with B3LYP method and Lanl2dz basis set to investigate (ZnO) n nano structures (n = 4-12) with substitution of Iron (Fe) as an impurity. We deeply investigated the effects after the substitution of one Fe atom in place of one Zn atom for each (ZnO) n nano structures. All the structures have been analyzed in detail and the relationship of the structural effects has also been discussed after the Fe substitution. The variation in Binding Energy (BE) as well as electronic properties have also been discussed. For the different cluster families relative energies were also calculated and the results obtained were compared to the previous works. In all cluster families, Binding Energy was found to increase when Fe was substituted and HOMO-LUMO energy gap was found to decrease when compared to the results of the pure form.

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“…References within this section prove that ZnO is an interesting material for study and its potential is increased with the fact that combining a base material with small amounts of a different material can modify the base material properties; this option widens the possibilities of zinc oxide (ZnO) for new applications. In semiconductors, such technique is commonly used to achieve a modification in the opto-electronic properties [43][44][45] and several teams have been working on improving such characteristics as well as other features like conductive and magnetic properties by using impurities in different percents and locations [46][47][48].…”

Section: Introductionmentioning

confidence: 99%

Effects of Moderate Amounts of Sulfur Substitutional Impurities on ZnO Using Density Functional Theory

Flores-Hidalgo¹

2011

TONANOJ

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A theoretical study on the effects of a moderate amount of sulfur when used as substituent impurity in place of oxygen in zinc oxide at its crystal form using Density Functional Theory (DFT). S-substituent amounts in percent go from 0.1% up to 1.0% and we analyze modifications in the crystal properties such as lattice characteristics, total energy, and gap energy. Lattice parameter c increased slightly as S-substituent percent increased, lattice parameter a had an opposite behavior because it decreased as the S-substituent increased and c/a rate had ups and downs but with very slight variation between consecutive values. Total energy calculations showed an increasing trend at all times and binding energy showed a decreasing trend at all times as the substituent percent increase but the variation between consecutive points was small. Gap energy had a decreasing trend with a maximum variation of 6.57% at 1.0% S-substituent from pristine ZnO. To correct DFT underestimation of gap energy we applied a correction factor and found a decreasing trend as the substituent percent increase and observed the highest difference from undoped ZnO was 1.42% at 1.0%S-substituent. We study the effects on the ZnO structure occurring when moderate S-substituent amounts from 0.1% to 1.0% are used and provide new knowledge to predict if the geometric and electronic structure changes may be suitable for new applications of ZnO in opto-electronics.

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Electronic structure and electrical properties of Na-doped C60 thin films

Cited by 7 publications

References 14 publications

Structural Characteristics of Phosphorus-Doped C₆₀ Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

Structural Characteristics of Phosphorus-Doped C₆₀ Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

Quantum Chemical Study of Fe Doped ZnO Nanoclusters

Effects of Moderate Amounts of Sulfur Substitutional Impurities on ZnO Using Density Functional Theory

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Electronic structure and electrical properties of Na-doped C60 thin films

Cited by 7 publications

References 14 publications

Structural Characteristics of Phosphorus-Doped C60 Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

Structural Characteristics of Phosphorus-Doped C60 Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

Quantum Chemical Study of Fe Doped ZnO Nanoclusters

Effects of Moderate Amounts of Sulfur Substitutional Impurities on ZnO Using Density Functional Theory

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Product

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Structural Characteristics of Phosphorus-Doped C₆₀ Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

Structural Characteristics of Phosphorus-Doped C₆₀ Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique