Electronic structure and Fermi surface of Bi(100)

Hofmann, Philip; Gayone, J. E.; Bihlmayer, Gustav; Koroteev, Yuri M.; Chulkov, Eugene V.

doi:10.1103/physrevb.71.195413

Cited by 56 publications

(23 citation statements)

References 23 publications

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“…Such measurements could establish that the surface Fermi arc encloses an odd number of time-reversal invariant momenta in the strong topological insulator phase. Detailed angle-resolved photoemission spectroscopy studies have been carried out on the surfaces of bismuth [67][68][69] and antimony. 70 However, the presence of the bulk Fermi surface complicates the analysis of these materials.…”

Section: Other Materialsmentioning

confidence: 99%

Topological insulators with inversion symmetry

2007

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Topological insulators are materials with a bulk excitation gap generated by the spin-orbit interaction that are different from conventional insulators. This distinction is characterized by Z 2 topological invariants, which characterize the ground state. In two dimensions, there is a single Z 2 invariant that distinguishes the ordinary insulator from the quantum spin-Hall phase. In three dimensions, there are four Z 2 invariants that distinguish the ordinary insulator from "weak" and "strong" topological insulators. These phases are characterized by the presence of gapless surface (or edge) states. In the two-dimensional quantum spin-Hall phase and the threedimensional strong topological insulator, these states are robust and are insensitive to weak disorder and interactions. In this paper, we show that the presence of inversion symmetry greatly simplifies the problem of evaluating the Z 2 invariants. We show that the invariants can be determined from the knowledge of the parity of the occupied Bloch wave functions at the time-reversal invariant points in the Brillouin zone. Using this approach, we predict a number of specific materials that are strong topological insulators, including the semiconducting alloy Bi 1−x Sb x as well as α-Sn and HgTe under uniaxial strain. This paper also includes an expanded discussion of our formulation of the topological insulators in both two and three dimensions, as well as implications for experiments. Topological insulators are materials with a bulk excitation gap generated by the spin-orbit interaction that are different from conventional insulators. This distinction is characterized by Z 2 topological invariants, which characterize the ground state. In two dimensions, there is a single Z 2 invariant that distinguishes the ordinary insulator from the quantum spin-Hall phase. In three dimensions, there are four Z 2 invariants that distinguish the ordinary insulator from "weak" and "strong" topological insulators. These phases are characterized by the presence of gapless surface ͑or edge͒ states. In the two-dimensional quantum spin-Hall phase and the threedimensional strong topological insulator, these states are robust and are insensitive to weak disorder and interactions. In this paper, we show that the presence of inversion symmetry greatly simplifies the problem of evaluating the Z 2 invariants. We show that the invariants can be determined from the knowledge of the parity of the occupied Bloch wave functions at the time-reversal invariant points in the Brillouin zone. Using this approach, we predict a number of specific materials that are strong topological insulators, including the semiconducting alloy Bi 1−x Sb x as well as ␣-Sn and HgTe under uniaxial strain. This paper also includes an expanded discussion of our formulation of the topological insulators in both two and three dimensions, as well as implications for experiments.

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Section: Other Materialsmentioning

confidence: 99%

Topological insulators with inversion symmetry

2007

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“…These two interfaces set up the boundary condition for the quantum states and they can also support localized electronic states at the Fermi level, which could dominate the transport properties of a sufficiently thin film. 5,6,8 Later, it was indeed found that many low-index surfaces of Bi studied are good two dimensional metals [11][12][13][14] ͑for a review see Ref.…”

Section: Introductionmentioning

confidence: 99%

“…We therefore performed our measurements on the ͑111͒ surface of Bi for which the electronic structure and even the lifetime of the surface states are well known. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] growth direction for thin films. Our findings have direct relevance for the study of the semimetal to semiconductor transitions in these films.…”

Section: Introductionmentioning

confidence: 99%

The conductivity of Bi(111) investigated with nanoscale four point probes

Wells

Handrup

Kallehauge

et al. 2008

Journal of Applied Physics

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The room temperature conductance of Bi͑111͒ was measured using microscopic four point probes with a contact spacing down to 500 nm. The conductance is remarkably similar to that of the bulk, indicating that surface scattering is not a major mechanism for restricting the mobility at this length scale. Also, the high density of electronic surface states on Bi͑111͒ does not appear to have a major influence on the measured conductance. The lower limit for the resistivity due to electronic surface states is found to be around 5 ⍀. With such a value for the surface resistivity, surface conduction should not be a significant factor to inhibit the observation of the predicted semiconductor to semimetal transition for thin films of Bi.

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“…However, if bulk bismuth is described as topologically trivial [22][23][24] then an unpaired Fermi level crossing is not expected here.…”

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confidence: 99%

One-dimensional spin texture of Bi(441): Quantum spin Hall properties without a topological insulator

et al. 2015

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Bianchi, M., Song, F., Cooil, S., Monsen, A. F., Wahlstr?m, E., Miwa, J. A., Rienks, E. D. L., Evans, D. A., Strozecka, A., Pascual, J. I., Leandersson, M., Balasubramanian, T., Hofmann, P., Wells, J. W. (2015). One-dimensional spin texture of Bi(441): Quantum spin Hall properties without a topological insulator. Physical Review B, 91(16), [165307].The high index (441) surface of bismuth has been studied using scanning tunneling microscopy (STM), angle resolved photoemission spectroscopy (APRES), and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like terraces. Two surface localized states are observed, both of which are linearly dispersing in one in-plane direction (kx), and dispersionless in the orthogonal in-plane direction (ky), and both of which have a Dirac-like crossing at kx=0. Spin ARPES reveals a strong in-plane polarization, consistent with Rashba-like spin-orbit coupling. One state has a strong out-of-plane spin component, which matches with the miscut angle, suggesting its possible origin as an edge state. The electronic structure of Bi(441) has significant similarities with topological insulator surface states and is expected to support one-dimensional quantum spin Hall-like coupled spin-charge transport properties with inhibited backscattering, without requiring a topological insulator bulk.publishersversionPeer reviewe

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Electronic structure and Fermi surface of Bi(100)

Cited by 56 publications

References 23 publications

Topological insulators with inversion symmetry

Topological insulators with inversion symmetry

The conductivity of Bi(111) investigated with nanoscale four point probes

One-dimensional spin texture of Bi(441): Quantum spin Hall properties without a topological insulator

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