2014
DOI: 10.1016/j.intermet.2013.10.021
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Electronic structure and ferromagnetism of Fe11NiSi4, Fe11CoSi4, Fe11CrSi4 and Fe3Si from first principles

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Cited by 8 publications
(3 citation statements)
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“…A lower number of bonding electrons causes weaker electrostatic interactions. 52 On the contrary, when the electron doping concentration gradually increases from 0.1 e to 1.0 e , the DOS deviate towards lower energy regions, connoting an increment in the number of electrons below the Fermi level. This induces a more stable structure.…”
Section: Resultsmentioning
confidence: 98%
“…A lower number of bonding electrons causes weaker electrostatic interactions. 52 On the contrary, when the electron doping concentration gradually increases from 0.1 e to 1.0 e , the DOS deviate towards lower energy regions, connoting an increment in the number of electrons below the Fermi level. This induces a more stable structure.…”
Section: Resultsmentioning
confidence: 98%
“…A lower number of bonding electrons causes weaker electrostatic interactions. [47] In addition, the TDOS for B 2 -2-B 2 -5 structures at the Fermi level increases from 13.06 to 16.89 states eV À1 , which means that the structural stability declines. A wider breadth of the pseudogap leads to stronger overlapping action.…”
Section: Resultsmentioning
confidence: 99%
“…The number of bonding electrons below the Fermi level decreases when Fe[B] atoms substitute more Si atoms. A lower number of bonding electrons causes weaker electrostatic interactions . In addition, the TDOS for B 2 ‐2–B 2 ‐5 structures at the Fermi level increases from 13.06 to 16.89 states eV −1 , which means that the structural stability declines.…”
Section: Resultsmentioning
confidence: 99%