Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111)

Stauffer, Louise; Mharchi, A.; Pirri, C.; Wetzel, P.; Bolmont, D.; Gewinner, G.; Minot, Christian

doi:10.1103/physrevb.47.10555

Cited by 70 publications

(47 citation statements)

References 19 publications

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“…The computed band structure (Fig. 2a) is in nice agreement with the band structure calculated by Stauffer et al [9]. Special emphasis is drawn to band (A), which is in the fundamental gap of the underlying Si (1 1 1) substrate.…”

Section: Resultssupporting

confidence: 75%

“…Whether one can do structural analysis with this technique depends on the required accuracy. Stauffer et al [9] have already shown for the same system that one can distinguish between vastly different surface arrangements via comparing experimental photoemission data to simple model calculations. The lack of computational accuracy though did not permit a quantitative analysis.…”

Section: Discussionmentioning

confidence: 99%

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Use of angle-resolved photoemission and density functional theory for surface structural analysis of YSi2

et al. 2004

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The atomic structure of two-dimensional yttrium silicide epitaxially grown on Si(1 1 1) was investigated by means of density functional theory calculations and angle-resolved photoemission experiments. The obtained accuracy of the calculations allowed to discriminate different surface arrangements in a quantitative way via comparing their theoretical band structure to the experimental result. Theoretically we find significant changes in the dispersion of a surface localized band upon varying the thickness of the topmost silicon bilayer. For a thickness of 0.4A of the topmost silicon bilayer a strong asymmetry of the surface localized band with respect to C is found, while a thickness of 0.8 A yields a more symmetric dispersion of the band. By comparison with the experimental photoemission results, which show a rather symmetric band around C, we can conclude that the topmost bilayer has a thickness of 0.8 A.

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Section: Resultssupporting

confidence: 75%

Section: Discussionmentioning

confidence: 99%

Use of angle-resolved photoemission and density functional theory for surface structural analysis of YSi2

et al. 2004

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“…This band crosses the Fermi edge close to the ⌫ point, at k F ϭ0.1 Å Ϫ1 , leading to the formation of a hole pocket, similar to the one reported for ErSi 2 . 18 Around the M point, and close to the Fermi energy, an increase of the photoemission intensity can be seen. Again, in analogy to the ErSi 2 case, one may a priori assign this feature to an electron pocket with a k F ϭ0.…”

Section: Surface Bandsmentioning

confidence: 96%

“…11,18 ARUPS experiments show two bands crossing the Fermi level, originating 2D hole and electron pockets around the ⌫ and M points, respectively. These bands are responsible for all the features appearing in the Fermi surface ͑FS͒.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111)

et al. 2004

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The electronic structure and the Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si͑111͒, YSi 2 and GdSi 2 , have been studied by a combination of angle-resolved ultraviolet photoemission spectroscopy and density functional theory calculations. Both silicides present a very similar electronic structure, with two characteristic electronic bands below the Fermi energy. One crosses the Fermi energy near the ⌫ point of the surface Brillouin zone ͑hole pocket͒ and the other one close to the M point ͑electron pocket͒. These two bands arise from surface ͑localized͒ states and are responsible for all the Fermi surface features. The theoretical calculations are in good qualitative agreement with the experimental results, and also allow to examine the nature of the bonding between the rare earth and the neighboring silicon atoms. We have found a combination of sp metallic type bond together with covalent bonds involving the rare-earth d states and Si 3p states.

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“…The system investigated here is the Erbium disilicide grown on Si(111)-7x7. This system has been extensively studied theoretically and experimentally by photoemission [39,40], and an atomic model of this structure has been determined by Gewinner and co-workers [39,41]. This structural model consists in a p(1x1) plane of Erbium atoms inserted between the silicon substrate and a buckled silicon layer [40].…”

Section: Measurements Of the Ft-sts Of The Ldos In Au(111) And Ersimentioning

confidence: 99%

Fourier-transform scanning tunnelling spectroscopy: the possibility to obtain constant-energy maps and band dispersion using a local measurement

Simon¹,

Bena²,

Vonau³

et al. 2011

J. Phys. D: Appl. Phys.

115

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We present here an overview of the Fourier Transform Scanning Tunneling spectroscopy technique (FT-STS). This technique allows one to probe the electronic properties of a two-dimensional system by analyzing the standing waves formed in the vicinity of defects. We review both the experimental and theoretical aspects of this approach, basing our analysis on some of our previous results, as well as on other results described in the literature. We explain how the topology of the constant energy maps can be deduced from the FT of dI/dV map images which exhibit standing waves patterns. We show that not only the position of the features observed in the FT maps, but also their shape can be explained using different theoretical models of different levels of approximation. Thus, starting with the classical and well known expression of the Lindhard susceptibility which describes the screening of electron in a free electron gas, we show that from the momentum dependence of the susceptibility we can deduce the topology of the constant energy maps in a joint density of states approximation (JDOS). We describe how some of the specific features predicted by the JDOS are (or are not) observed experimentally in the FT maps. The role of the phase factors which are neglected in the rough JDOS approximation is described using the stationary phase conditions. We present also the technique of the T-matrix approximation, which takes into account accurately these phase factors. This technique has been successfully applied to normal metals, as well as to systems with more complicated constant energy contours. We present results recently obtained on graphene systems which demonstrate the power of this technique, and the usefulness of local measurements for determining the band structure, the map of the Fermi energy and the constantenergy maps.

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Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111)

Cited by 70 publications

References 19 publications

Use of angle-resolved photoemission and density functional theory for surface structural analysis of YSi2

Use of angle-resolved photoemission and density functional theory for surface structural analysis of YSi2

Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111)

Fourier-transform scanning tunnelling spectroscopy: the possibility to obtain constant-energy maps and band dispersion using a local measurement

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