2019
DOI: 10.1360/sspma-2019-0098
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Electronic structure and optical properties of two-dimensional antimony: A first principle study

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Cited by 3 publications
(3 citation statements)
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“…Le Chen et al employed the first-principles approach based on DFT to investigate the properties of antimonene comprising 1–4 layers, and the results showed that the single-layer antimonene has an indirect bandgap semiconductor state. 57 However, as the number of layers increases, antimonene turns from a semiconductor to a metal. In addition, the reflection coefficients of antimonene increase as the number of layers rises in both the low-energy and high-energy regions of photons.…”
Section: Preparation Of 2d Antimonenementioning
confidence: 99%
“…Le Chen et al employed the first-principles approach based on DFT to investigate the properties of antimonene comprising 1–4 layers, and the results showed that the single-layer antimonene has an indirect bandgap semiconductor state. 57 However, as the number of layers increases, antimonene turns from a semiconductor to a metal. In addition, the reflection coefficients of antimonene increase as the number of layers rises in both the low-energy and high-energy regions of photons.…”
Section: Preparation Of 2d Antimonenementioning
confidence: 99%
“…Antimonene with different thickness has different electronic structure and optical properties, depending on its thickness. CHEN Wen et al [18] studied the properties of 1-4 layers of antimonene through first principle, and the results showed that 1 L and 2 L have indirect band gaps by using PBE, HSE, and modified Van der Waals (FDT-2), and 3L and 4L exhibit metal properties. At the same time, its reflection and absorption capacity were analyzed.…”
Section: Theoretical Researchmentioning
confidence: 99%
“…The mechanical and electronic properties of monomolecular membrane of antimonene can also be regulated by uniaxial and biaxial tensile strain [15][16][17]. Under tensile strain, antimonene can be transformed from an indirect band gap semiconductor to a direct one, or even semi-metal [18,19]. Especially under strong electric field, their band gap gradually closes due to the field-induced motion of near free electron states [20].…”
Section: Introductionmentioning
confidence: 99%