2004
DOI: 10.1103/physrevb.70.045313
|View full text |Cite
|
Sign up to set email alerts
|

Electronic structure and optical properties of silicon nanowires: A study using x-ray excited optical luminescence and x-ray emission spectroscopy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

6
62
0

Year Published

2006
2006
2018
2018

Publication Types

Select...
5
3
1

Relationship

1
8

Authors

Journals

citations
Cited by 100 publications
(68 citation statements)
references
References 26 publications
6
62
0
Order By: Relevance
“…26 It has successfully been used to study the chemical origin of luminescence in porous Si, Si nanowires, SnO 2 nano-ribbons, Ga 2 O 3 nanostructures, and ZnS nanostructures as well as ZnO-ZnS and Si-CdSe nano-heterostructures. [27][28][29][30][31][32][33][34] In XEOL, one monitors the intensity of the luminescent bands as the X-ray energy is raised above the core level binding energy of a particular element in the system, thereby exciting an electron from a core level to a previously unoccupied state in the conduction band. The decay of the excited state can give rise to more intense luminescence via energy transfer to the optical channel.…”
Section: Introductionmentioning
confidence: 99%
“…26 It has successfully been used to study the chemical origin of luminescence in porous Si, Si nanowires, SnO 2 nano-ribbons, Ga 2 O 3 nanostructures, and ZnS nanostructures as well as ZnO-ZnS and Si-CdSe nano-heterostructures. [27][28][29][30][31][32][33][34] In XEOL, one monitors the intensity of the luminescent bands as the X-ray energy is raised above the core level binding energy of a particular element in the system, thereby exciting an electron from a core level to a previously unoccupied state in the conduction band. The decay of the excited state can give rise to more intense luminescence via energy transfer to the optical channel.…”
Section: Introductionmentioning
confidence: 99%
“…The native (1-2 nm thick) surface oxide on a SiNW may limit sensor performance due to the presence of interfacial electronic states. 28,29 In addition, the oxide surface of SiNWs acts as a dielectric which can screen the NW from the chemical event to be sensed. Covalent alkyl passivation of Si(111) surfaces can render those surfaces resistant to oxidation in air 30 and under oxidative potentials.…”
Section: Introductionmentioning
confidence: 99%
“…In the literature [54], the PL emission from pure bulk silica is at 2.8 eV (442 nm), which is close to the blue peak from the alkylated samples at 430 nm. Sham et al [55] measured X-ray excited optical luminescence (XEOL) and X-ray emission spectroscopy (XES) on silicon nanowires and showed that the blue emission is associated with the silicon oxide layer on the samples employed. This suggests that the blue PL emission we see is from oxidized Si species and the orange PL emission originates from unoxidized Si.…”
Section: Origin Of the Orange And Blue Pl Emissionmentioning
confidence: 99%