Electronic structure and properties of Cu2-xS thin films: Dependence of phase structures and free-hole concentrations

Li, Zhan Hua; Egbo, Kingsley O.; Lv, Xiao Hu; Wang, Ying; Yu, K. M.; Liu, Chao Ping

doi:10.1016/j.apsusc.2021.151530

Cited by 9 publications

(4 citation statements)

References 69 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The EPD process was applied to the fabrication of nanostructured films to realize the p-type semiconductor characteristics of the Cu 2– x S NPs for macroscale devices. The Cu 2– x S NP-based film achieves high electron transport properties by constructing a rigid contract film structure . Four-point probe measurements were performed to compare the resistivity of the Cu 2– x S NP-based films prepared via EPD with different ligand-treated NP solutions.…”

Section: Resultsmentioning

confidence: 99%

“…The Cu 2– x S NP-based film achieves high electron transport properties by constructing a rigid contract film structure. 46 Four-point probe measurements were performed to compare the resistivity of the Cu 2– x S NP-based films prepared via EPD with different ligand-treated NP solutions. The 3- and 5 mmol-treated NP film samples showed the same thickness (3.3 μm) on a Si wafer substrate with a ∼250 nm oxide layer ( Figure 7 a,b).…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Contact Enhancement in Nanoparticle Assemblies through Electrophoretic Deposition

et al. 2022

View full text Add to dashboard Cite

A strong interparticle connection needs to be realized to harvest unique nanoscale features of colloidal nanoparticles (NPs) in film structures. Constructing a strong contact and adhesion of NPs on a substrate is an essential process for improved NP film properties, and therefore, its key factors should be determined by understanding the NP deposition mechanism. Herein, we investigated the critical factors leading to the robust and strong adherence of the film structure and revealed that the NP deposition mechanism involved the role of surfactant ligands during electrophoretic deposition (EPD). The high amount of surfactant ligand treatment results in a high deposition rate of NPs in the early stage; however, the ligand treatment does not influence the deposition rate in the later stage. Furthermore, the deposition mechanism is found to involve three steps during EPD: island formation, lateral growth, and layer-by-layer deposition. Rapid NP deposition kinetics controlled by ligand treatments demonstrate the strong contact and adhesion of NP film structures; they are characterized by the fast charge transfer, low resistivity, and rigid NP layers of the Cu 2−x S NP-based devices. Finally, the controlled role of surfactant ligands in EPD enables design of high-performance nanostructured NP film devices with contact enhancement.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Contact Enhancement in Nanoparticle Assemblies through Electrophoretic Deposition

et al. 2022

View full text Add to dashboard Cite

show abstract

“…However, the p-type doping technique is still challenging because the activation energy of the acceptors and the self-trapping energy of the holes are large [38,39]. For the purpose of achieving p-type Ga 2 O 3 , great efforts have been taken by researchers from all over the world [40][41][42][43][44][45][46][47][48][49][50][51]. For power applications, Ohmic contact is one of the key steps in β-Ga 2 O 3 device fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3

Zhang,

Miao,

et al. 2023

Inorganics

View full text Add to dashboard Cite

β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barrier diodes (SBDs) and solar-blind ultraviolet photodetectors. Ohmic contact is one of the key steps in the β-Ga2O3 device fabrication process for power applications. Ohmic contact techniques have been developed in recent years, and they are summarized in this review. First, the basic theory of metal–semiconductor contact is introduced. After that, the representative literature related to Ohmic contact with β-Ga2O3 is summarized and analyzed, including the electrical properties, interface microstructure, Ohmic contact formation mechanism, and contact reliability. In addition, the promising alternative schemes, including novel annealing techniques and Au-free contact materials, which are compatible with the CMOS process, are discussed. This review will help our theoretical understanding of Ohmic contact in β-Ga2O3 devices as well as the development trends of Ohmic contact schemes.

show abstract

“…Specifically, it has been observed that m h increases progressively with the density of carriers, due to the material displaying more Cu vacancies and related defects which hinder the overall mobility of the holes. [5] It is therefore possible to either have low carrier density with very high mobility, which is preferable for applications such as high-speed electronics, [6] or high carrier densities with low mobility, which leads to strong free carrier absorption and localization effects which can be of interest for plasmonic applications. [7] Among copper chalcogenides, copper sulfide has been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties and Ultrafast Near‐Infrared Localized Surface Plasmon Dynamics in Naturally p‐Type Digenite Films

Villa

Telkhozhayeva

Marangi

et al. 2022

Advanced Optical Materials

View full text Add to dashboard Cite

Copper chalcogenides are materials characterized by intrinsic doping properties, allowing them to display high carrier concentrations due to their defect-heavy structures, independent of the preparation method. Such high doping enables these materials to display plasmonic resonances, tunable by varying their stoichiometry, as shown previously for Cu2-xS, Cu2-xSe, and Cu2-xTe, with 0 1 ns) signal associated with phonon-phonon scattering relaxation. These results confirm the possibility of fabricating Cu9S5 films retaining the plasmonic properties of individual NCs, anticipating integrating these films into heterojunctions with suitable hole acceptor materials to build hot-hole-transfer-based optoelectronic devices.

show abstract

Electronic structure and properties of Cu2-xS thin films: Dependence of phase structures and free-hole concentrations

Cited by 9 publications

References 69 publications

Contact Enhancement in Nanoparticle Assemblies through Electrophoretic Deposition

Contact Enhancement in Nanoparticle Assemblies through Electrophoretic Deposition

Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3

Optical Properties and Ultrafast Near‐Infrared Localized Surface Plasmon Dynamics in Naturally p‐Type Digenite Films

Contact Info

Product

Resources

About