Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

Li, A.H; Shahbazi, Mahboobeh; Zhou, Sihai; Wang, Guoxiu; Zhang, Chaofeng; Jood, Priyanka; Peleckis, Germanas; Du, Yi; Cheng, Zhenxiang; Wang, Xiaolin; Kuo, Y. K.

doi:10.1016/j.tsf.2010.03.124

Cited by 46 publications

(18 citation statements)

References 11 publications

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“…We have fabricated polycrystalline Bi 2 Te 3 samples with a common c-axis orientation using the Czochralski method as described elsewhere [24]. From these, flakes were produced by mechanical cleaving, proven to be a powerful tool for the fabrication of a few quintuple layer thin Bi 2 Te 3 flakes [25].…”

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confidence: 99%

Josephson supercurrent through a topological insulator surface state

et al. 2012

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Topological insulators are characterized by an insulating bulk with a finite band gap and conducting edge or surface states, where charge carriers are protected against backscattering. These states give rise to the quantum spin Hall effect without an external magnetic field, where electrons with opposite spins have opposite momentum at a given edge. The surface energy spectrum of a threedimensional topological insulator is made up by an odd number of Dirac cones with the spin locked to the momentum. The long-sought yet elusive Majorana fermion is predicted to arise from a combination of a superconductor and a topological insulator. An essential step in the hunt for this emergent particle is the unequivocal observation of supercurrent in a topological phase. Here, we present the first measurement of a Josephson supercurrent through a topological insulator. Direct evidence for Josephson supercurrents in superconductor (Nb) - topological insulator (Bi2Te3) - superconductor e-beam fabricated junctions is provided by the observation of clear Shapiro steps under microwave irradiation, and a Fraunhofer-type dependence of the critical current on magnetic field. The dependence of the critical current on temperature and length shows that the junctions are in the ballistic limit. Shubnikov-de Haas oscillations in magnetic fields up to 30 T reveal a topologically non-trivial two-dimensional surface state. We argue that the ballistic Josephson current is hosted by this surface state despite the fact that the normal state transport is dominated by diffusive bulk conductivity. The lateral Nb-Bi2Te3-Nb junctions hence provide prospects for the realization of devices supporting Majorana fermions

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confidence: 99%

Josephson supercurrent through a topological insulator surface state

et al. 2012

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“…The film annealed at 573 K exhibits typical semiconductor behaviour, that is, the resistivity increases when the temperature decreases. The resistivity of the as-grown film is quasi-constant at 1 mO cm, which is much lower than for the single crystal sample [21]. The out-of-plane resistivity shows semiconductor behaviour due to electron scattering.…”

Section: Resultsmentioning

confidence: 77%

Fabrication and characterization of textured Bi2Te3 thermoelectric thin films prepared on glass substrates at room temperature using pulsed laser deposition

Wang

et al. 2013

Journal of Crystal Growth

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“…Recently, it has been experimentally shown that the graphene/Bi 2 Te 3 composite exhibits an enhanced thermoelectric efficiency compared with the individual efficiencies of the two materials when they are not in contact . Furthermore, the improved thermoelectric efficiency, as defined by the ratio of the composite's electric power factor to its thermal conductivity, is shown to be mainly attributable to the significantly reduced thermal conductivity of the composite, as compared to the individual conductivities of graphene or Bi 2 Te 3 .…”

Section: Introductionmentioning

confidence: 99%

Interfacial Thermal Contact Conductance inside the Graphene–Bi₂Te₃ Heterostructure

Pyun

Kihm

Cheon

et al. 2019

Adv Materials Inter

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Graphene–Bi2Te3, a graphene‐based compound with a metal/metalloid heterostructure, is recently discovered to be a potentially novel thermoelectric material, demonstrating unprecedently enhanced thermoelectric efficiencies. The interfacial thermal transport must play an important role in determining the thermoelectric performance of this heterostructure. In particular, the interfacial thermal contact conductance (Gc) must be known in order to correctly elaborate the thermoelectric performances of graphene–Bi2Te3. Furthermore, the large nonlinear optoelectric response of this heterostructure redefines both the graphene thermal conductivity (kg) and its optical absorbance (Ag). A significantly suppressed Ag is predicted as low as 0.86% from its nominal value of 2.72% when suspended, from the transfer matrix calculations based on the Fresnel principle. Both Gc and kg are simultaneously determined from the optothermal Raman thermometry by duplexing the Raman data sets using two different objective magnifications (20× and 100×), which allows for the matching of the number of unknowns (Gc and kg) with the corresponding two Raman data sets. The thermal properties of Gc and kg for the graphene–Bi2Te3 heterostructure are first determined as 3.455 ± 0.619 × 106 W m−2 K−1 and 440.124 ± 76.265 W m−1 K−1, respectively.

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Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

Cited by 46 publications

References 11 publications

Josephson supercurrent through a topological insulator surface state

Josephson supercurrent through a topological insulator surface state

Fabrication and characterization of textured Bi2Te3 thermoelectric thin films prepared on glass substrates at room temperature using pulsed laser deposition

Interfacial Thermal Contact Conductance inside the Graphene–Bi₂Te₃ Heterostructure

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Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

Cited by 46 publications

References 11 publications

Josephson supercurrent through a topological insulator surface state

Josephson supercurrent through a topological insulator surface state

Fabrication and characterization of textured Bi2Te3 thermoelectric thin films prepared on glass substrates at room temperature using pulsed laser deposition

Interfacial Thermal Contact Conductance inside the Graphene–Bi2Te3 Heterostructure

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Product

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Interfacial Thermal Contact Conductance inside the Graphene–Bi₂Te₃ Heterostructure