Here, we review the advances in understanding the structure and properties of magnetoelectric gallium ferrite (GaFeO 3 or GFO). Special significance of GFO lies in its compositional tunability over a large range of Ga:Fe ratio without forming a second phase which also renders prospective room temperature magnetoelectricity in the material. Detailed structural studies show noncentrosymmetric orthorhombic Pc2 1 n symmetry without any structural phase transition between 4 K and 700 K. The material shows a ferrimagnetic behavior driven by cation site disorder, corroborated both experimentally as well as theoretically, with transition temperature dependent upon Ga:Fe ratio. GFO exhibits magnetostructural and magnetoelectric coupling indicating coupling among the structural, magnetic and electrical degrees of freedom which could possibly be utilized to strain engineer electrical and magnetic properties in the thin film structures. However, the biggest challenge remains to reduce the leakage in the material in both thin film and bulk form which hinders its potential as a device material.