ELECTRONIC STRUCTURE CALCULATIONS ON MoTe₂ WITH ROTATED PLANES

Abstract

Electronic structure calculations have been carried out using Extended Hückel tightbinding method for 2H MoTe 2 for the cases both unrotated and with rotated planes. It has been found that relative rotations of the tellurium layers ranging from 5 to 16 degrees have the same total energies and total energies/atom as the unrotated structure. Moreover, an increased in metallic behavior has been observed, as long as the degrees of rotated planes are increased. Finally, good agreement has been found among previous experimental measurements in the diffraction pattern of irradiated MoTe 2 and our calculated 5, 6 and 7 degrees of rotations.